PLL502-30
750kHz – 800MHz Low Phase Noise VCXO (for 12 – 25MHz Crystals)
FEATURES
•
•
•
•
•
•
•
•
•
•
750kHz to 800MHz output range.
Low phase noise output (@ 10kHz frequency
offset, -142dBc/Hz for 19.44MHz, -125dBc/Hz for
155.52MHz, -115dBc/Hz for 622.08MHz).
Selectable CMOS, PECL and LVDS output.
Selectable High Drive or Standard CMOS.
12 to 25MHz crystal input.
No external load capacitor or varicap required.
Output Enable selector.
Wide pull range (+/-200ppm)
3.3V operation.
Available in DIE (65 mil x 62 mil).
DIE CONFIGURATION
65 mil
OUTSEL0^
OUTSEL1^
SEL0^
SEL1^
VDD
VDD
VDD
VDD
(1550,1475)
17
16
25
24
23
22
21
20
19
18
GNDBUF
CMOS
LVDSB
PECLB
VDDBUF
VDDBUF
PECL
LVDS
OE_SEL^
XIN
XOUT
SEL3^
62 mil
26
Die ID:
A0505-18
27
15
28
14
13
SEL2^
29
12
11
OE_CTRL
VCON
30
DESCRIPTION
The PLL502-30 is a monolithic low jitter and low
phase noise (-142dBc/Hz @ 10kHz offset) VCXO IC
Die, with CMOS, LVDS and PECL output, covering
the 750kHz to 800MHz output range. It allows the
control of the output frequency with an input voltage
(VCON), using a low cost crystal.
The same die can be used as a VCXO with output
frequencies ranging from F
XIN
/ 16 to F
XIN
x 32
thanks to frequency selector pads. This makes the
PLL502-30 ideal as a universal die for applications
ranging from ADSL to SONET.
C502A
10
31
1
2
3
4
5
6
7
8
9
Y
X
(0,0)
Note: ^ denotes internal pull up
OUTPUT SELECTION AND ENABLE
OUTSEL1
(Pad #18)
0
0
1
1
OUTSEL0
(Pad #25)
0
1
0
1
OE_CTRL
(Pad #30)
Selected Output
High Drive CMOS
Standard CMOS
PECL
LVDS
State
DIE SPECIFICATIONS
Name
Size
Reverse side
Pad dimensions
Thickness
Value
62 x 65 mil
GND
80 micron x 80 micron
10 mil
OE_SELECT
(Pad #9)
0
BLOCK DIAGRAM
VCO
Divider
Charge
Pump
+
Loop
Filter
VCO
1 (Default)
Pad #9:
0
(Default)
1
0
1
(Default)
Output enabled
Tri-state
Tri-state
Output enabled
Bond to GND to set to “0”, bond to VDD to set to “1”
Pad #30: Logical states defined by PECL levels if OE_SELECT is “0”
Logical states defined by CMOS levels if OE_SELECT is “1”
CLKBAR
CLK
SEL
Reference
Divider
XTAL
OSC
VARICAP
Phase
Detector
XIN
XOUT
OE
VCON
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 01/20/06 Page 1
GNDBUF
GND
GND
GND
GND
GND
GND
N/C
PLL502-30
750kHz – 800MHz Low Phase Noise VCXO (for 12 – 25MHz Crystals)
FREQUENCY SELECTION TABLE
SEL3
(Pad #28)
SEL2
(Pad #29)
SEL1
(Pad #19)
SEL0
(Pad #20)
Selected Multiplier
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Reserved
Reserved
Reserved
Fin x 32
Reserved
Reserved
Fin / 8
Fin x 2
Reserved
Fin / 2
Fin / 16
Fin x 4
Fin / 4
Fin x 8
Fin x 16
No multiplication
All pads have internal pull-ups (default value is 1). Bond to GND to set to 0.
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS
Supply Voltage
Input Voltage, dc
Output Voltage, dc
Storage Temperature
Ambient Operating Temperature*
Junction Temperature
Lead Temperature (soldering, 10s)
ESD Protection, Human Body Model
SYMBOL
V
DD
V
I
V
O
T
S
T
A
T
J
MIN.
-0.5
-0.5
-65
-40
MAX.
4.6
V
DD
+0.5
V
DD
+0.5
150
85
125
260
2
UNITS
V
V
V
°C
°C
°C
°C
kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.
*
Note:
Operating Temperature is guaranteed by design for all parts (COMMERCIAL and INDUSTRIAL), but tested for COMMERCIAL grade only.
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 01/20/06 Page 2
PLL502-30
750kHz – 800MHz Low Phase Noise VCXO (for 12 – 25MHz Crystals)
2. Crystal Specifications
PARAMETERS
Crystal Resonator Frequency
Crystal Loading Rating
Crystal Pullability
Recommended ESR
SYMBOL
F
XIN
C
L (xtal)
C
0
/C
1 (xtal)
R
E
CONDITIONS
Parallel Fundamental Mode
at VCON = 1.65V
AT cut
AT cut
MIN.
12
TYP.
9.5
MAX.
25
250
30
UNITS
MHz
pF
-
Ω
Note:
Crystal Loading rating: 9.5pF is the loading the crystal sees from the VCXO chip at VCON = 1.65V. It is assumed that the crystal will be at
nominal frequency at this load. If the crystal requires more load to be at nominal frequency, the additional load must be added externally. This
however may reduce the pull range.
3. Voltage Control Crystal Oscillator
PARAMETERS
VCXO Stabilization Time *
VCXO Tuning Range
CLK output pullability
VCXO Tuning Characteristic
Pull range linearity
VCON pin input impedance
VCON modulation BW
SYMBOL
T
VCXOSTB
CONDITIONS
From power valid
F
XIN
= 12 – 25MHz;
XTAL C
0
/C
1
< 250
0V
≤
VCON
≤
3.3V
VCON=1.65V,
±1.65V
MIN.
TYP.
MAX.
10
UNITS
ms
ppm
ppm
ppm/V
%
kΩ
kHz
500
±200
150
10
2000
25
0V
≤
VCON
≤
3.3V, -3dB
Note:
Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
4. General Electrical Specifications
PARAMETERS
Supply Current,
Dynamic (with
Loaded Outputs)
Operating Voltage
Output Clock
Duty Cycle
Short Circuit
Current
SYMBOL
I
DD
V
DD
CONDITIONS
PECL/LVDS/CMOS
Fout<24MHz
24MHz<Fout<96MHz
96MHz<Fout<700MHz
MIN.
TYP.
MAX.
60/28/15
65/45/30
100/80/40
3.63
55
55
55
UNITS
mA
V
%
mA
@ 50% V
DD
(CMOS)
@ 1.25V (LVDS)
@ V
DD
– 1.3V (PECL)
2.97
45
45
45
50
50
50
±50
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 01/20/06 Page 3
PLL502-30
750kHz – 800MHz Low Phase Noise VCXO (for 12 – 25MHz Crystals)
5. Jitter Specifications
PARAMETERS
CONDITIONS
With capacitive decoupling
between VDD and GND.
Over 10,000 cycles.
FREQUENCY
19.44MHz
77.76MHz
155.52MHz
622.08MHz
19.44MHz
77.76MHz
155.52MHz
622.08MHz
155.52MHz
622.08MHz
MIN.
TYP.
2.2
3.5
4.3
5.0
17
25
27
35
2.6
2.5
MAX.
UNITS
Period jitter
RMS
1
ps
Period jitter Peak-to-
Peak
1
With capacitive decoupling
between VDD and GND.
Over 10,000 cycles.
Integrated 12 kHz to 20 MHz
ps
Integrated jitter RMS
2
4
4
ps
6. Phase Noise Specifications
PARAMETERS
Phase Noise
2
relative
to carrier
(typical)
FREQUENCY
19.44MHz
77.76MHz
155.52MHz
622.08MHz
@10Hz
-80
-72
-65
-55
@100Hz
-108
-103
-95
-85
@1kHz
-132
-122
-120
-109
@10kHz
-142
-130
-125
-115
@100kHz
-150
-125
-121
-110
UNITS
dBc/Hz
Note: Phase Noise measured at VCON = 0V
7. CMOS Electrical Characteristics
PARAMETERS
Output drive current
(High Drive)
Output drive current
(Standard Drive)
Output Clock Rise/Fall Time
(Standard Drive)
Output Clock Rise/Fall Time
(High Drive)
SYMBOL
I
OH
I
OL
I
OH
I
OL
CONDITIONS
V
OH
= V
DD
-0.4V, V
DD
=3.3V
V
OL
= 0.4V, V
DD
= 3.3V
V
OH
= V
DD
-0.4V, V
DD
=3.3V
V
OL
= 0.4V, V
DD
= 3.3V
0.3V ~ 3.0V with 15 pF load
0.3V ~ 3.0V with 15 pF load
MIN.
30
30
10
10
TYP.
MAX.
UNITS
mA
mA
mA
mA
2.4
1.2
ns
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 01/20/06 Page 4
PLL502-30
750kHz – 800MHz Low Phase Noise VCXO (for 12 – 25MHz Crystals)
8. LVDS Electrical Characteristics
PARAMETERS
Output Differential Voltage
V
DD
Magnitude Change
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
SYMBOL
V
OD
∆V
OD
V
OH
V
OL
V
OS
∆V
OS
I
OXD
I
OSD
CONDITIONS
MIN.
247
-50
TYP.
355
MAX.
454
50
UNITS
mV
mV
V
V
V
mV
uA
mA
R
L
= 100
Ω
(see figure)
1.4
0.9
1.125
0
1.1
1.2
3
±1
-5.7
1.6
1.375
25
±10
-8
V
out
= V
DD
or GND
V
DD
= 0V
9. LVDS Switching Characteristics
PARAMETERS
Differential Clock Rise Time
Differential Clock Fall Time
LVDS Levels Test Circuit
OUT
SYMBOL
t
r
t
f
CONDITIONS
R
L
= 100
Ω
C
L
= 10 pF
(see figure)
MIN.
0.2
0.2
TYP.
0.7
0.7
MAX.
1.0
1.0
UNITS
ns
ns
LVDS Switching Test Circuit
OUT
50Ω
C
L
= 10pF
V
OD
V
OS
V
DIFF
R
L
= 100Ω
50Ω
C
L
= 10pF
OUT
OUT
LVDS Transistion Time Waveform
OUT
0V (Differential)
OUT
80%
V
DIFF
20%
0V
80%
20%
t
R
t
F
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 01/20/06 Page 5
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