DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of October 1992
File under discrete semiconductors, SC14
1995 Sep 18
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
High power gain
•
Gold metallization ensures
excellent reliability
•
SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, 2 columns
BFR92AW
3
1
Top view
Marking code:
P2.
2
MBC870
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
up to T
s
= 93
°C;
note 1
I
C
= 15 mA; V
CE
= 10 V
I
C
= 0; V
CE
= 10 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°C
F
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
noise figure
junction temperature
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
open base
CONDITIONS
open emitter
−
−
−
−
40
−
3.5
−
−
−
−
MIN.
−
−
−
−
90
0.35
5
14
8
2
−
TYP.
MAX.
20
15
25
300
−
−
−
−
−
−
150
pF
GHz
dB
dB
dB
°C
UNIT
V
V
mA
mW
1995 Sep 18
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
up to T
s
= 93
°C;
see Fig.2; note 1
open base
open collector
CONDITIONS
open emitter
MIN.
−
−
−
−
−
−65
−
BFR92AW
MAX.
20
15
2
25
300
+150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 93
°C;
note 1
VALUE
190
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
400
P tot
(mW)
300
MLB540
200
100
0
0
50
100
150
200
T s ( o C)
Fig.2 Power derating curve
1995 Sep 18
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
(unless otherwise specified).
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 1 GHz; T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 10 V;
f = 2 GHz; T
amb
= 25
°C
F
noise figure
I
C
= 5 mA; V
CE
= 10 V;
f = 1 GHz;
Γ
s
=
Γ
opt
I
C
= 5 mA; V
CE
= 10 V;
f = 2 GHz;
Γ
s
=
Γ
opt
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and G
UM
−
40
−
−
−
−
−
−
−
MIN.
−
90
0.6
0.9
0.35
5
14
8
2
3
TYP.
BFR92AW
MAX.
50
−
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz 3.5
s
21 2
=
10 log ------------------------------------------------------------ dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
1995 Sep 18
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
handbook, halfpage
120
MCD074
1.0
C re
(pF)
0.8
MGC883
h FE
80
0.6
0.4
40
0.2
0
0
10
20
I C (mA)
30
0
0
4
8
12
16
20
VCB (V)
V
CE
= 10 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
6
MGC884
f
T
(GHz)
4
2
0
1
10
I C (mA)
10
2
V
CE
= 5 V; f = 500 MHz; T
amb
= 25
°C.
Fig.5
Transition frequency as a function of
collector current; typical values.
1995 Sep 18
5
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