DISCRETE SEMICONDUCTORS
DATA SHEET
BF547W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
June 1994
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
FEATURES
•
Stable oscillator operation
•
High current gain
•
Good thermal stability.
APPLICATIONS
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, 2 columns
BF547W
3
1
Top view
Marking code:
E2.
2
MBC870
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
up to T
s
= 63
°C;
note 1
I
C
= 2 mA; V
CE
= 10 V
I
C
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 500 MHz
I
C
= 1 mA; V
CE
= 10 V;
f = 100 MHz; T
amb
= 25
°C
CONDITIONS
open emitter
open base
−
−
−
−
40
−
0.8
−
MIN.
−
−
−
−
95
1
1.2
20
TYP.
MAX.
30
20
50
300
250
−
1.6
−
pF
GHz
dB
UNIT
V
V
mA
mW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
up to T
s
= 63
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−65
−
MIN.
30
20
3
50
300
+150
+150
MAX.
V
V
V
mA
mW
°C
°C
UNIT
Note to the “Quick reference data” and “Limiting values”
1. T
s
is the temperature at the soldering point of the collector pin.
June 1994
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
(unless otherwise specified).
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.G
UM
PARAMETER
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
CONDITIONS
I
C
= 0.01 mA; I
E
= 0
I
C
= 10 mA; I
B
= 0
I
E
= 0.01 mA; I
C
= 0
I
E
= 0; V
CB
= 10 V
I
C
= 2 mA; V
CE
= 10 V
I
C
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 500 MHz
I
C
= 1 mA; V
CE
= 10 V;
f = 100 MHz; T
amb
= 25
°C;
−
−
−
−
40
−
0.8
−
MIN.
−
−
−
−
95
1
1.2
20
TYP.
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 63
°C;
note 1
BF547W
VALUE
290
UNIT
K/W
MAX.
30
20
3
100
250
−
1.6
−
V
V
V
UNIT
nA
pF
GHz
dB
s
21 2
=
10 log ------------------------------------------------------------ dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
June 1994
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
handbook, halfpage
400
MLB587
MBB397
handbook, halfpage
140
P tot
(mW)
300
100
h FE
200
60
100
0
0
50
100
150
200
T s ( o C)
20
10
1
1
10
2
I C (mA) 10
V
CE
= 10 V; T
j
= 25
°C.
Fig.3
Fig.2
Power derating curve.
DC current gain as a function of collector
current; typical values.
handbook, halfpage
2
MLB588
MLB589
C re
handbook, halfpage
1.4
(pF)
1.6
fT
(GHz)
1
1.2
0.8
0.6
0.4
0
0
4
8
12
16
20
VCB (V)
0.2
10
1
1
10
2
I C (mA) 10
I
C
= 0; f = 1 MHz.
V
CE
= 10 V; f = 500 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function
of collector current; typical values.
June 1994
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
handbook, halfpage
30
MLB590
handbook, halfpage
50
MLB591
gain
(dB)
20
gain
(dB)
40
30
20
10
10
0
0
5
10
15
I C (mA)
20
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 10 V; f = 100 MHz.
V
CE
= 10 V; I
C
= 15 mA.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
Gain as a function of frequency;
typical values.
handbook, halfpage
1
MLB592
VCE(sat)
(V)
handbook, halfpage
6
MLB593
0.8
F
(dB)
4
0.6
0.4
2
0.2
0
0
2
4
6
8
10
I C (mA)
0
10
1
1
I C (mA)
10
I
C
/I
B
= 10.
V
CE
= 10 V; Z
S
= Z
L
= 50
Ω;
f = 100 MHz.
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9
Minimum noise figure as a function of
collector current; typical values.
June 1994
5
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