MG150J1JS50
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1JS50
High Power Switching Applications
Motor Control Applications
l
The electrodes are isolated from case.
l
High input impedance
l
Includes a complete half bridge in one package.
l
Enhancement-mode
l
High speed : t
f
= 0.30 µs (max) (I
C
= 150 A)
t
rr
= 0.15 µs (max) (I
F
= 150 A)
l
Low saturation voltage
: V
CE (sat)
= 2.70 V (max) (I
C
= 150 A)
Unit: mm
Equivalent Circuit
E
1
/C
2
C
1
E
2
JEDEC
JEITA
―
―
2-95A2A
G
1
E
1
TOSHIBA
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
V
R
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
―
Rating
600
±20
600
150
300
150
300
780
150
−40
to 125
2500
(AC 1 min.)
3/3
Unit
V
V
V
A
Forward current
A
W
°C
°C
V
N·m
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal/mounting)
1
2002-11-21
MG150J1JS50
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Reverse current
Forward voltage
Reverse recovery time
Thermal resistance
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
t
d (on)
t
r
t
on
t
d (off)
t
f
t
off
I
R
V
F
t
rr
R
th (j-c)
V
R
= 600 V
I
F
= 150 A, V
GE
= 0
I
F
= 150 A, V
GE
=
−10
V
di/dt = 200 A/µs
Transistor stage
Diode stage
Inductive load
V
CC
= 300 V
I
C
= 150 A
V
GE
= ±15 V
R
G
= 6.2
Ω
(Note 1)
Test Condition
V
GE
= ±20 V, V
CE
= 0
V
CE
= 600 V, V
GE
= 0
I
C
= 15 mA, V
CE
= 5 V
I
C
= 150 A,V
GE
= 15 V
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
Min
―
―
5.0
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
―
―
7.0
2.10
14200
0.15
0.15
0.50
0.20
0.15
0.50
―
2.30
0.08
―
―
Max
±500
2.0
8.0
2.70
―
0.30
0.30
1.00
0.40
0.30
1.00
1.0
3.00
0.15
0.16
0.35
mA
V
µs
°C/W
µs
Unit
nA
mA
V
V
pF
Note 1: Switching time test circuit & timing chart
2
2002-11-21
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