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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Should be replaced with:
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© Nexperia B.V. (year). All rights reserved.
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BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCV62
BCV62A
BCV62B
BCV62C
SOT143B
JEITA
-
BCV61
BCV61A
BCV61B
BCV61C
NPN complement
Type number
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Applications with working point independent of temperature
Current mirrors
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−5
V; I
C
=
−100 μA
V
CE
=
−5
V; I
C
=
−2
mA
Conditions
open base
Min
-
-
100
100
Typ
-
-
-
-
Max
−30
−100
-
800
Unit
V
mA
Per transistor
Transistor TR1
NXP Semiconductors
BCV62
PNP general-purpose double transistors
Quick reference data
…continued
Parameter
DC current gain
BCV62
BCV62A
BCV62B
BCV62C
Conditions
V
CE
=
−5
V; I
C
=
−2
mA
100
100
220
420
-
-
-
-
800
250
475
800
Min
Typ
Max
Unit
Table 2.
Symbol
h
FE
Transistor TR2
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Description
collector TR2;
base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
1
2
1
2
006aaa843
Simplified outline
4
3
Graphic symbol
4
3
TR2
TR1
3. Ordering information
Table 4.
Ordering information
Package
Name
BCV62
BCV62A
BCV62B
BCV62C
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 5.
BCV62
BCV62A
BCV62B
BCV62C
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
3M*
3J*
3K*
3L*
Type number
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
2 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBS
I
C
I
CM
I
BM
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
V
CE
= 0 V
Min
-
-
-
-
-
-
Max
−30
−30
−6
−100
−200
−200
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
-
-
−65
−65
Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Min
-
Typ
-
Max
500
Unit
K/W
thermal resistance from junction in free air
to ambient
Device mounted on an FR4 PCB.
7. Characteristics
Table 8.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
Conditions
V
CB
=
−30
V; I
E
= 0 A
V
CB
=
−30
V; I
E
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V;
I
C
=
−100 μA
V
CE
=
−5
V; I
C
=
−2
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA;
I
B
=
−0.5
mA
I
C
=
−100
mA;
I
B
=
−5
mA
BCV62
All information provided in this document is subject to legal disclaimers.
Min
-
-
-
100
100
-
-
Typ
-
-
-
-
-
−75
−250
Max
−15
−5
−100
-
800
−300
−650
Unit
nA
μA
nA
Transistor TR1
I
EBO
h
FE
mV
mV
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
3 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
Table 8.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol
V
BEsat
Parameter
base-emitter
saturation voltage
Conditions
I
C
=
−10
mA;
I
B
=
−0.5
mA
I
C
=
−100
mA;
I
B
=
−5
mA
V
BE
f
T
base-emitter voltage
transition frequency
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CE
=
−5
V;
I
C
=
−10
mA;
f = 100 MHz
V
CB
=
−10
V;
I
E
= i
e
= 0 A
V
CE
=
−5
V;
I
C
=
−200 μA;
R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
V
CB
= 0 V; I
E
=
−250
mA
V
CB
= 0 V; I
E
=
−10 μA
h
FE
DC current gain
BCV62
BCV62A
BCV62B
BCV62C
Transistors TR1 and TR2
I
C1
/I
E2
current matching
I
E2
=
−0.5
mA;
V
CE1
=
−5
V;
T
amb
≤
25
°C
T
amb
≤
150
°C
I
E2
[1]
[2]
[3]
[1]
Min
-
-
−600
-
100
Typ
−700
−850
−650
-
-
Max
-
-
−750
−820
-
Unit
mV
mV
mV
mV
MHz
[1]
[2]
[2]
C
c
NF
collector capacitance
noise figure
-
-
4.5
-
-
10
pF
dB
Transistor TR2
V
EBS
emitter-base voltage
-
−400
100
100
220
420
-
-
-
-
-
-
−1.5
-
800
250
475
800
V
mV
V
CE
=
−5
V; I
C
=
−2
mA
0.7
0.7
[3]
-
-
-
1.3
1.3
−5
mA
emitter current 2
V
CE1
=
−5
V
-
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
Device, without emitter resistors, mounted on an FR4 PCB.
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
4 of 14
能源基础设施
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