Silicon Carbide Power Schottky Diode
CDBDSC8650-G
Reverse Voltage: 650 V
Forward Current: 8 A
RoHS Device
Features
- Rated to 650V at 8 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on V
F
0.264(6.70)
0.256(6.50)
0.215(5.46)
0.201(5.10)
0.023(0.58)
0.018(0.46)
D-PAK(TO-252)
0.091(2.32)
0.089(2.28)
3
0.012(0.30)
Max.
0.051(1.30)
0.043(1.10)
0.409(10.40)
0.394(10.00)
0.244(6.20)
0.236(6.00)
Φ
1
2
0.114(2.90)
0.100(2.55)
Circuit Diagram
C(3)
0.090(2.29)
0.035(0.89)
0.093(2.37)
0.085(2.16)
0.034(0.86)
0.026(0.66)
0.023(0.58)
0.016(0.43)
Dimensions in inches and
(millimeters)
C(1)
A(2)
Maximum Ratings
(at T
A
=25°C, unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
T
C
= 25°C
T
C
= 135°C
T
C
= 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
Conditions
Symbol
V
RRM
V
RSM
V
DC
I
F
Value
650
650
650
25.5
Unit
V
V
V
A
Continuous forward current
11
8
50
100
102.4
Repetitive peak forward surge cruuent
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
I
FRM
I
FSM
A
A
W
T
C
= 25°C
T
C
= 110°C
Junction to case
P
TOT
R
θJC
T
J
T
STG
45
1.465
-55 ~ +175
-55 ~ +175
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics
(at T
A
=25°C, unless otherwise noted)
Parameter
Forward voltage
Conditions
I
F
= 8A, T
j
= 25°C
I
F
= 8A, T
j
= 175°C
Symbol
V
F
Min.
Typ.
1.45
1.75
10
15
30
550
Max.
1.7
2.5
100
200
Unit
V
Reverse current
V
R
= 650V, T
j
= 25°C
V
R
= 650V, T
j
= 175°C
V
R
= 400V, T
j
= 150°C
Q
C
=
∫
C(V) dv
VR
0
I
R
μA
Total capacitive charge
Q
C
nC
588
57
54.5
pF
V
R
= 0V, T
j
= 25°C, f = 1MH
Z
Total capacitance
V
R
= 200V, T
j
= 25°C, f = 1MH
Z
V
R
= 400V, Tj=25°C, f=1MH
Z
C
56.5
54
RATING AND CHARACTERISTIC CURVES (CDBDSC8650-G)
Fig.1 - Forward Characteristics
11
10
9
T
J
=25°C
Fig.2 - Reverse Characteristics
0.09
0.08
Reverse
Current,
I
R
(mA)
Forward Current, I
F
(A)
8
7
6
5
4
3
2
1
0
0
0.4
0.8
T
J
=75°C
T
J
=125°C
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
T
J
=75°C
T
J
=25°C
T
J
=175°C
T
J
=125°C
T
J
=175°C
1.2
1.6
2.0
2.4
0
100
200
300
400
500
600
700
800
Forward Voltage, V
F
(V)
Reverse Voltage, V
R
(V)
Fig.3 - Current Derating
Capacitance Between Terminals, C
J
(pF)
90
80
10
Fig.4 - Capacitance vs. Reverse Voltage
600
550
500
450
400
350
300
250
200
150
100
50
0
0.01
0.1
1
10
100
1000
Forward Current, I
F
(A)
70
60
50
40
30
20
10
0
25
50
75
30 % D
50 %
%
Du
ty
uty
Duty
70% D
uty
DC
100
125
150
175
Case Tempature, T
C
(°C)
Reverse Voltage, V
R
(V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
REV:
Page 2
Comchip Technology CO., LTD.
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