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1N4007S R0

产品描述Rectifiers 1A,1000V,STD.SILASTIC RECT.
产品类别半导体    分立半导体   
文件大小281KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 全文预览

1N4007S R0概述

Rectifiers 1A,1000V,STD.SILASTIC RECT.

1N4007S R0规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
A-405
Vr - Reverse Voltage1000 V
If - Forward Current1 A
类型
Type
Standard Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1 V
Max Surge Current30 A
Ir - Reverse Current5 uA
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
高度
Height
2.7 mm
长度
Length
5.2 mm
产品
Product
Rectifiers
宽度
Width
2.7 mm
单位重量
Unit Weight
0.012346 oz

文档预览

下载PDF文档
1N4001S - 1N4007S
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Silicon Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
A-405
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
nd
1N
1N
100
70
100
200
140
200
ed
mm
e
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
1N
50
35
50
1N
1N
600
420
600
1N
800
560
800
1N
1000
700
1000
4001S 4002S 4003S 4004S 4005S 4006S 4007S
400
280
400
1
30
1.0
5
50
15
50
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
C
J
T
J
T
STG
R
θJA
Version: F15
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Typical thermal resistance
Storage temperature range
Operating junction temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1402005
No
tR
T
J
=25°C
T
J
=125°C
eco

 
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