1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
500mW, High Speed Switching Diode
FEATURES
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
=100mA
T
J MAX
Package
Configuration
VALUE
150
100
2
1
150
DO-35
Singal dice
UNIT
mA
V
A
V
°C
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: DO-35
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 109
±
4 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Power dissipation
Repetitive peak reverse voltage
Repetitive peak forward current
Pluse width = 1μs, Square wave
Non-Repetitive peak forward current
Forward current
Junction temperature range
Storage temperature range
SYMBOL
P
D
V
RRM
I
FSM
I
FRM
I
F(AV)
T
J
T
STG
1N4148
1N4448
500
100
2
450
150
-65 to +150
-65 to +150
1N914B
UNIT
mW
V
A
mA
mA
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
240
UNIT
°C/W
1
Version:I1702
1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
1N4448,1N914B
Forward voltage
per diode
(1)
SYMBOL
MIN
0.62
MAX
0.72
1.00
1.00
-
UNIT
I
F
= 5 mA,
T
J
= 25°C
I
F
= 10 mA,
T
J
= 25°C
I
F
= 100 mA,
T
J
= 25°C
V
R
V
F
1N4148
1N4448,1N914B
I
R
= 100 μA, T
J
= 25°C
-
-
100
75
-
V
Reverse voltage
I
R
= 5 μA, T
J
= 25°C
Reverse current
@ rated V
R
per
diode
(2)
V
-
25
5
4
4
nA
μA
pF
ns
V
R
= 20 V, T
J
= 25°C
I
R
V
R
= 75 V, T
J
= 25°C
1 MHz, V
R
=0V
I
F
= 10mA , V
R
=6V, R
L
= 100Ω ,
C
J
T
rr
-
-
-
Junction
capacitance
Reverse
recovery time
I
RR
= 1mA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
1Nxxxx
(Note 1&2)
PACKING
CODE
R0
G
A0
DO-35
5K / Box(Ammo)
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
10K / 14" Reel
Notes:
1. "xxxx" is device code from 4148 to 914B
*: optional available
EXAMPLE
EXAMPLE P/N
1N4148 R0G
PART NO.
1N4148
PACKING CODE
R0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:I1702
1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
1
Fig. 2 Reverse Current VS. Reverse Voltage
10000
100°C
Forward Current (A)
0.1
Reverse Current :lR (nA)
Ta=25°C
1000
70°C
100
50°C
10
0.01
Ta=25°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage (V)
1
0
20
40
60
80
100
120
Reverse Voltage : VR (V)
Fig.3 Admissible Power Dissipation Curve
500
1.5
Fig.4 Typical Junction Capacitance
300
Junction Capacitance (pF)
Power Dissipation (mW)
400
1.2
f=1.0 MHz
0.9
200
0.6
100
0.3
0
0
25
50
75
100
125
150
175
200
Ambient Temperature (
o
C)
0
0
5
10
15
20
25
30
Reverse Voltage (V)
3
Version:I1702
1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
DO-35
DIM.
A
B
C
D
Unit(mm)
Min
0.34
2.90
25.40
1.30
Max
0.60
5.08
38.10
2.28
Unit(inch)
Min
0.013
0.114
1.000
0.051
Max
0.024
0.200
1.500
0.090
MARKING DIAGRAM
4
Version:I1702
1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version:I1702