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BUZ11
Data Sheet
September 2013
File Number 2253.2
N-Channel Power MOSFET
50V, 30A,
40 mΩ
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
T
J
= 25
o
C, V
DS
= 50V, V
GS
= 0V
T
J
= 125
o
C, V
DS
= 50V, V
GS
= 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 10)
V
GS
= 20V, V
DS
= 0V
I
D
= 15A, V
GS
= 10V (Figure 8)
V
DS
= 25V, I
D
= 15A (Figure 11)
V
CC
= 30V, I
D
≈
3A, V
GS
= 10V, R
GS
= 50Ω,
R
L
= 10Ω
MIN
50
2.1
-
-
-
-
4
-
-
-
-
-
-
-
TYP
-
3
20
100
10
0.03
8
30
70
180
130
1500
750
250
≤
1.67
≤
75
MAX
-
4
250
1000
100
0.04
-
45
110
230
170
2000
1100
400
UNITS
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
2. Pulse Test: Pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
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