LT5522
400MHz to 2.7GHz
High Signal Level
Downconverting Mixer
FEATURES
■
■
■
■
■
■
■
■
■
■
■
DESCRIPTIO
Internal On-Chip RF Input Transformer
50Ω Single-Ended RF and LO Ports
High Input IP3: +25dBm at 900MHz
+21.5dBm at 1900MHz
Low Power Consumption: 280mW Typical
Integrated LO Buffer: Low LO Drive Level
High LO-RF and LO-IF Isolation
Wide RF Frequency Range: 0.4GHz to 2.7GHz*
Very Few External Components
Enable Function
4.5V to 5.25V Supply Voltage Range
16-Lead (4mm
×
4mm) QFN Package
The LT
®
5522 active downconverting mixer is optimized for
high linearity downconverter applications including cable
and wireless infrastructure. The IC includes a high speed
differential LO buffer amplifier driving a double-balanced
mixer. The LO buffer is internally matched for wideband,
single-ended operation with no external components.
The RF input port incorporates an integrated RF trans-
former and is internally matched over the 1.2GHz to 2.3GHz
frequency range with no external components. The RF
input match can be shifted down to 400MHz, or up to
2.7GHz, with a single shunt capacitor or inductor, respec-
tively. The high level of integration minimizes the total
solution cost, board space and system-level variation.
The LT5522 delivers high performance and small size
without excessive power consumption.
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance.
Consult factory for information and assistance.
APPLICATIO S
■
■
■
■
Cellular, PCS and UMTS Band Infrastructure
CATV Downlink Infrastructure
2.4GHz ISM
High Linearity Downmixer Applications
TYPICAL APPLICATIO
LT5522
LO
+
LO INPUT
–5dBm
LO
–
G
C
, SSB NF (dB), IIP3 (dBm)
IF
+
1850MHz
TO
1910MHz
LNA
RF
+
2.7pF
100pF
150nH
140MHz
(TYP)
VGA
RF
–
BIAS/
CONTROL
EN
V
CC1
V
CC2
5V
0.01µF
3.3µF
150nH
IF
–
LTC1748
ADC
5522 F01
Figure 1. High Signal Level Downmixer for Wireless Infrastructure
5522fa
U
1.9GHz Conversion Gain, IIP3, SSB
NF and LO-RF Leakage vs LO Power
24
22
20
18
16
14
12
10
8
6
4
2
0
–11
LO-RF
–50
IF = 140MHz
LOW-SIDE LO –60
T
A
= 25°C
V
CC
= 5V
–70
–1
1
–9
–7
–5
–3
LO INPUT POWER (dBm)
5522 TA01
U
U
–10
IIP3
–20
LO-RF LEAKAGE (dBm)
SSB NF
–30
–40
1
LT5522
ABSOLUTE
(Note 1)
AXI U
RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW
Supply Voltage ...................................................... 5.5V
Enable Voltage ............................... –0.3V to V
CC
+ 0.3V
LO Input Power ............................................... +10dBm
LO
+
to LO
–
Differential DC Voltage .........................
±1V
LO Input DC Common Mode Voltage ......................
±1V
RF Input Power ................................................ +10dBm
RF
+
to RF
–
Differential DC Voltage ........................
±0.2V
RF Input DC Common Mode Voltage ......................
±1V
Operating Temperature Range ................ –40°C to 85°C
Storage Temperature Range ................. – 65°C to 125°C
Junction Temperature (T
J
).................................... 125°C
LO
+
LO
–
NC
16 15 14 13
NC 1
RF
+
2
RF
–
3
NC 4
5
6
7
8
17
12 GND
11 IF
+
10 IF
–
9 GND
EN
UF PACKAGE
16-LEAD (4mm
×
4mm) PLASTIC QFN
T
JMAX
= 125°C,
θ
JA
= 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
V
CC2
V
CC1
ORDER PART NUMBER
LT5522EUF
NC
NC
UF PART MARKING
5522
Order Options
Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking:
http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
DC ELECTRICAL CHARACTERISTICS
(Test circuit shown in Figure 2) V
CC
= 5VDC, EN = high, T
A
= 25°C,
unless otherwise noted. (Note 3)
PARAMETER
Power Supply Requirements (V
CC
)
Supply Voltage
Supply Current
Shutdown Current
Enable (EN) Low = Off, High = On
Input High Voltage (On)
Input Low Voltage (Off)
Enable Pin Input Current
Turn On Time
Turn Off Time
EN = 5VDC
CONDITIONS
MIN
4.5
V
CC
= 5V
EN = Low
3
0.3
55
3
5
75
TYP
5
56
MAX
5.25
68
100
UNITS
VDC
mA
µA
VDC
VDC
µA
µs
µs
AC ELECTRICAL CHARACTERISTICS
PARAMETER
RF Input Frequency Range
(Notes 2, 3) (Test circuit shown in Figure 2).
MIN
400
TYP
1200 to 2300
2700
400
0.1 to 1000
15
13
–10
18
–5
>45
0
2700
MAX
UNITS
MHz
MHz
MHz
MHz
MHz
dB
dB
dB
dBm
dB
5522fa
CONDITIONS
Shunt Capacitor on Pin 3 (Low Band)
No External Matching (Mid Band)
Shunt Inductor on Pin 3 (High Band)
No External Matching
Requires Appropriate IF Matching
Z
O
= 50Ω
Z
O
= 50Ω
Z
O
= 50Ω
50MHz to 2700MHz
LO Input Frequency Range
IF Output Frequency Range
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
LO Input Power
RF to LO Isolation
2
U
W
U
U
W W
W
LT5522
AC ELECTRICAL CHARACTERISTICS
PARAMETER
Conversion Gain
CONDITIONS
RF = 450MHz, High Side LO
RF = 900MHz
RF = 1800MHz
RF = 1900MHz
RF = 2100MHz
RF = 2450MHz
T
A
= –40°C to 85°C
RF = 450MHz, High Side LO
RF = 900MHz
RF = 1800MHz
RF = 1900MHz
RF = 2100MHz
RF = 2450MHz
RF = 900MHz
RF = 1800MHz
RF = 2100MHz
RF = 2450MHz
f
LO
= 400MHz to 2700MHz
f
LO
= 400MHz to 2700MHz
900MHz: f
RF
= 830MHz at –12dBm
1900MHz: f
RF
= 1830MHz at –12dBm
900MHz: f
RF
= 806.67MHz at –12dBm
1900MHz: f
RF
= 1806.67MHz at –12dBm
RF = 450MHz, High Side LO
RF = 900MHz
RF = 1900MHz
Cellular/PCS/UMTS downmixer application: V
CC
= 5V, EN = high,
T
A
= 25°C, P
RF
= –7dBm (–7dBm/tone for 2-tone IIP3 tests,
∆f
= 1MHz), f
LO
= f
RF
– 140MHz, P
LO
= –5dBm, IF output measured at
140MHz, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2).
MIN
TYP
–2.0
–0.5
–0.2
–0.1
0.2
–0.7
–0.02
22.3
25.0
21.8
21.5
20.0
16.8
12.5
13.9
14.3
15.6
≤–50
≤–49
–73
–60
–72
–65
12.0
10.8
8.0
MAX
UNITS
dB
dB
dB
dB
dB
dB
dB/°C
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dBc
dBc
dBc
dBc
dBm
dBm
dBm
–2
Conversion Gain vs Temperature
Input 3rd Order Intercept
Single Sideband Noise Figure (Note 4)
LO to RF Leakage
LO to IF Leakage
2RF-2LO Output Spurious Product (f
RF
= f
LO
+ f
IF
/2)
3RF-3LO Output Spurious Product (f
RF
= f
LO
+ f
IF
/3)
Input 1dB Compression
1150MHz CATV infrastructure application: V
CC
= 5V, EN = high, T
A
= 25°C, RF input = 1150MHz at –12dBm (–12dBm/tone for 2-tone
IIP3 tests,
∆f
= 1MHz), LO input swept from 1200MHz to 2200MHz, P
LO
= –5dBm, IF output measured from 50MHz to 1050MHz unless
otherwise noted. (Note 3) (Test circuit shown in Figure 3).
PARAMETER
Conversion Gain
Input 3rd Order Intercept
Single Sideband Noise Figure (Note 4)
LO to RF Leakage
LO to IF Leakage
2RF – LO Output Spurious Product
2RF1 – LO Output Spurious Product
2RF2 – LO Output Spurious Product
(RF1 + RF2) – LO Output Spurious Product
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
CONDITIONS
f
LO
= 1650MHz, f
IF
= 500MHz
f
LO
= 1650MHz, f
IF
= 500MHz
f
LO
= 1650MHz, f
IF
= 500MHz
f
LO
= 1200MHz to 2200MHz
f
LO
= 1200MHz to 2200MHz
P
RF
= –12dBm (Single Tone), 50MHz
≤
f
IF
≤
900MHz
2-Tone 2nd Order Spurious Outputs
2
RF1 = 1147MHz, RF2 = 1153MHz, –15dBm/Tone
LO = 1650MHz, Spurs at 644MHz, 656MHz and 650MHz
950MHz to 1350MHz, Z
O
= 50Ω
1200MHz to 2200MHz, Z
O
= 50Ω
50MHz to 1050MHz, Z
O
= 50Ω
MIN
TYP
–0.6
23
14.3
≤–51
≤–45
≤–63
–68
–68
–63
>15
13
10
MAX
UNITS
dB
dBm
dB
dBm
dBm
dBc
dBc
dBc
dBc
dB
dB
dB
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
450MHz, 900MHz and 2450MHz performance measured with the
following external RF input matching. 450MHz: C5 = 8.2pF, 5mm away
from Pin 3 on the 50Ω input line. 900MHz: C5 = 2.2pF at Pin 3. 2450MHz:
L3 = 3.9nH at Pin 3. See Figure 2.
Note 3:
Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 4:
SSB Noise Figure measurements performed with a small-signal noise
source and bandpass filter on RF input, and no other RF signal applied.
5522fa
3
LT5522
TYPICAL AC PERFOR A CE CHARACTERISTICS
Conv Gain, IIP3 and SSB NF
vs RF Frequency (Low Side LO)
23
21
G
C
AND SSB NF (dB), IIP3 (dBm)
19
17
15
13
11
9
7
5
3
1
–1
1300
1500
G
C
1900
2100
1700
RF FREQUENCY (MHz)
2300
5522 G01
Mid-band RF (no external RF matching)
V
CC
= 5V, EN = High, T
A
= 25°C, P
RF
= –7dBm (–7dBm/tone for 2-tone IIP3 tests,
∆f
= 1MHz), P
LO
= –5dBm, IF output measured
at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2).
Conv Gain, IIP3 and SSB NF
vs RF Frequency (High Side LO)
23
G
C
AND SSB NF (dB), IIP3 (dBm)
IIP3
SSB NF
T
A
= 25°C
f
IF
= 140MHz
15
13
11
9
7
5
3
1
–1
1300
1500
SSB NF
LO LEAKAGE (dBm)
Conv Gain and IIP3
vs Temperature (RF = 1800MHz)
22
20
18
16
G
C
(dB), IIP3 (dBm)
14
12
10
8
6
4
2
G
C
0
f
IF
= 140MHz
–2
0
25
50
–50
–25
TEMPERATURE (°C)
LOW SIDE LO
HIGH SIDE LO
75
100
5522 G04
G
C
AND SSB NF (dB), IIP3 (dBm)
IIP3
LOW SIDE LO
HIGH SIDE LO
G
C
(dB), IIP3 (dBm)
Conv Gain and IIP3
vs Temperature (RF = 2100MHz)
20
18 LOW SIDE LO
G
C
AND SSB NF (dB), IIP3 (dBm)
16
G
C
(dB), IIP3 (dBm)
14
12
10
8
6
4
2
0
G
C
LOW SIDE LO
HIGH SIDE LO
HIGH SIDE LO
IIP3
20
18
16
14
12
10
8
6
4
2
0
75
100
5522 G07
SSB NF
25°C
85°C
–40°C
f
LO
= 1960MHz
f
IF
= 140MHz
G
C
OUTPUT POWER (dBm)
f
IF
= 140MHz
–2
–50
0
25
50
–25
TEMPERATURE (°C)
4
U W
LO Leakage vs LO Frequency
T = 25°C
–35 f
A
= 140MHz
IF
–40
–45
–50
–55
–60
–65
–70
–75
–80
LO-IF
LO-RF
–30
21
19
17
IIP3
T
A
= 25°C
f
IF
= 140MHz
G
C
1900
2100
1700
RF FREQUENCY (MHz)
2300
5522 G02
–85
–90
1100 1300 1500 1700 1900 2100 2300 2500
LO FREQUENCY (MHz)
5522 G03
Conv Gain, IIP3 and SSB NF
vs LO Power (RF = 1800MHz)
22
20
18
16
14
12
10
8
6
4
2
0
–2
–11
–9
–1
–7
–5
–3
LO INPUT POWER (dBm)
1
5522 G05
Conv Gain and IIP3 vs Supply
Voltage (RF = 1800MHz)
22
20
18
16
14
12
10
8
6
4
2
0
–2
4.5
5
5.25
4.75
SUPPLY VOLTAGE (V)
5.5
5522 G06
IIP3
SSB NF
25°C
85°C
–40°C
f
LO
= 1660MHz
f
IF
= 140MHz
G
C
IIP3
25°C
85°C
–40°C
f
LO
= 1660MHz
f
IF
= 140MHz
G
C
Conv Gain, IIP3 and SSB NF
vs LO Power (RF = 2100MHz)
10
IF OUT, 2
×
2 and 3
×
3 Spurs
vs RF Input Power (Single Tone)
0
–10
–20
–30
–40
–50
–60
–70
–80
2RF-2LO
(RF = 1830MHz)
T
A
= 25°C
f
LO
= 1760MHz
f
IF
= 140MHz
6
9
3RF-3LO
(RF = 1806.67MHz)
IF OUT
(RF = 1900MHz)
IIP3
–2
–11
–9
–1
–7
–5
–3
LO INPUT POWER (dBm)
1
5522 G08
–90
–21 –18 –15 –12 –9 –6 –3 0 3
RF INPUT POWER (dBm)
5522 G09
5522fa
LT5522
TYPICAL AC PERFOR A CE CHARACTERISTICS
Low Band Conv Gain, IIP3 and
SSB NF vs RF Frequency
18
16
14
12
G
C
(dB)
10
8
6
4
2
0
–2
600
LOW SIDE LO
G
C
700
900 1000 1100
800
RF FREQUENCY (MHz)
HIGH SIDE LO
T
A
= 25°C
f
IF
= 140MHz
SSB NF
HIGH SIDE LO
LOW SIDE LO
IIP3
26
24
22
SSB NF (dB), IIP3 (dBm)
20
18
16
14
12
10
8
6
1200
17
15
13
11
G
C
(dB)
9
7
5
3
1
–1
f
IF
= 140MHz
–3
–25
25
50
–50
0
TEMPERATURE (°C)
75
G
C
LOW SIDE LO
HIGH SIDE LO
HIGH SIDE LO
IIP3
Low-band RF (C5 = 2.2pF) and high-band RF
(L3 = 3.9nH) V
CC
= 5V, EN = High, T
A
= 25°C, P
RF
= –7dBm (–7dBm/tone for 2-tone IIP3 tests,
∆f
= 1MHz), P
LO
= –5dBm, IF output
measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2).
Low Band Conv Gain and IIP3
vs Temperature (RF = 900MHz)
LOW SIDE LO
26
24
22
OUTPUT POWER (dBm)
20
18
16
14
12
10
8
6
100
5522 G11
5522 G10
Low Band Conv Gain, IIP3 and SSB
NF vs LO Power (RF = 900MHz)
17
15
13
11
G
C
(dB)
9
7
5
3
1
–1
–3
–11
–9
–5
–3
–1
–7
LO INPUT POWER (dBm)
1
5522 G13
IIP3
LO LEAKAGE (dBm)
SSB NF
G
C
25°C
85°C
–40°C
f
LO
= 760MHz
f
IF
= 140MHz
16
14
12
10
8
6
–60
–65
–70
–75
–80
–85
–90
400
600
1000
1200
800
LO FREQUENCY (MHz)
1400
5522 G14
G
C
(dB)
High Band Conv Gain, IIP3, SSB NF
and LO Leakage vs RF Frequency
20
18
IIP3
SSB NF
LO-RF
0
–10
–20
G
C
(dB), IIP3 (dBm)
–30
–40
–50
–60
–70
T
A
= 25°C
f
IF
= 140MHz
LOW SIDE LO
G
C
2300
2500
2600
2400
RF FREQUENCY (MHz)
–80
–90
–100
–110
2700
5522 G16
G
C
AND SSB NF (dB), IIP3 (dBm)
16
14
12
10
8
6
4
2
0
–2
2200
G
C
(dB), IIP3 (dBm)
LO-IF
U W
26
24
22
SSB NF (dB), IIP3 (dBm)
20
18
Low Band IF OUT, 2
×
2 and 3
×
3
Spurs vs RF Input Power (Single Tone)
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
T
A
= 25°C
f
LO
= 760MHz
9
12
–100
–18 –15 –12 –9 –6 –3 0 3 6
RF INPUT POWER (dBm)
2RF-2LO
(RF = 830MHz)
3RF-3LO
(RF = 806.67MHz)
IF OUT
(RF = 900MHz)
IIP3 (dBm)
5522 G12
LO Leakage vs LO Frequency
(Low Band RF Match)
T
A
= 25°C
–35 f = 140MHz
IF
–40 P
LO
= –5dBm
–45
–50
–55
LO-IF
–30
17
15
13
11
9
7
5
3
1
–1
–3
Low Band Conv Gain and IIP3 vs
Supply Voltage (RF = 900MHz)
26
IIP3
24
22
20
25°C
85°C
–40°C
f
LO
= 760MHz
f
IF
= 140MHz
G
C
18
16
14
12
10
8
4.5
4.75
5
5.25
SUPPLY VOLTAGE (V)
6
5.5
5522 G15
IIP3 (dBm)
LO-RF
High Band Conv Gain and IIP3 vs
Temperature (RF = 2450MHz)
17
15
13
11
9
7
5
3
1
–1
–3
–50
–25
25
50
0
TEMPERATURE (°C)
75
100
5522 G17
High Band Conv Gain, IIP3 and SSB
NF vs LO Power (RF = 2450MHz)
18
20
IIP3
19
18
17
SSB NF
25°C
85°C
–40°C
f
LO
= 2310MHz
f
IF
= 140MHz
SSB NF (dB)
16
15
14
13
12
11
10
–9
–5
–3
–1
–7
LO INPUT POWER (dBm)
1
5522 G18
IIP3
16
14
12
10
8
6
4
2
0
–2
–11
LO LEAKAGE (dBm)
f
LO
= 2310MHz
f
IF
= 140MHz
G
C
G
C
5522fa
5
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