........................................................................................................................60 V ±20 %
Glow Voltage .......................................................................10 mA ........................................................~ 500 V
Arc Voltage ..........................................................................1 A .............................................................~ 100 V
Glow-Arc Transition Current ...................................................................................................................< 1 A
Impulse Discharge Current ..................................................20 kA, 8/20 µs ...........................................10 operations
100 A, 8/20 µs ...........................................300 operations
4 kA, 10/350 µs .........................................±5 operations
Operating & Storage Temperature..........................................................................................................-40 °C to +125 °C
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
2033 Series Gas Discharge Tube Surge Protector
Optimizing Model 2033 Series Stacked GDT Turn-on Performance
GDT1
GDT2
GDT3
3312 - 2 mm SMD Trimming Potentiometer
GDT4
C1
C2
C3
C4
Figure 1
Application
In high current 48 Vdc supply applications, multiple GDTs are required to be connected in series so that the sum of the arc voltages
exceed the dc supply voltage. The combined arc voltages of the stacked GDT
(typically 12 V x 5 = 60 V)
exceed the 48 Vdc supply
which is then not capable of providing enough current to maintain the GDT in an on-state of operation. A stacked GDT design allows
for proper reset of the GDT after a transient event.
The downside of a stacked design is that the summation of the individual GDT chamber sparkover voltages results in a device with
a high impulse sparkover voltage. For example, if each chamber of the stacked GDT had an impulse sparkover voltage of 400 V, the
total impulse sparkover for the entire GDT would be
5 x 400 V (2000 V).
In many cases, this higher sparkover voltage can have a
negative impact to downstream components if their voltage sensitivity is less than the impulse sparkover of the stacked GDT.
Solution
High impulse sparkover can be improved by utilzing decoupling capacitors across 4 of 5 individual chambers of the stacked GDT.
Typical capacitor values can range from 100 pF to 1 nF.
How it Works
In its intial state, all component values are zero. Under a fast rising voltage ramp condition, there is a capacitive voltage division
across GDT1 and C1. During the voltage ramp, most of the voltage appears across GDT1. When the voltage across GDT1 reaches its
sparkover voltage (400 V), the voltage across GDT1 drops to its arc voltage which is typically around 12 V.
As a result, the capacitor is charged to a value equaling the sparkover voltage less the arc voltage
(example: 400 V - 12 V = 388 V)
which is then applied to GDT2. When GDT2 reaches 400 V, it then attains sparkover and the process repeats itself until GDT5 finally
attains sparkover. This cascading turn-on mechanism of the capacitively coupled GDT chambers result in a signficantly improved
impulse sparkover voltage.
Results
In the table below, both 800 V and 1400 V stacked GDTs were compared using a 5 kV/µs voltage ramp. ITU K.12 recommends using
a linear ramp as the best method for evaluating GDT impulse sparkover under fast rising voltage conditions. Impulse sparkover
voltage limiting is signficantly improved versus using the stacked GDT discretely. It should be noted that there is some improvement in
impulse limiting by using a larger capacitor (1 nF). However, the improvement in impulse limiting must be measured against the cost of
using a larger capacitor.
C1-C4
Capacitor Values
No Capacitor
100 pF
1 nF
Model 2033-80
Typical Impulse Sparkover @ 5 kV/µs
2200 V
700 V
600 V
Model 2033-140
Typical Impulse Sparkover @ 5 kV/µs
2400 V
988 V
886 V
NOTE: Impulse sparkover in the characteristic table on Page 1 is shown under combination wave conditions (8/20 µs current/1.2x50 µs voltage).
This non-linear voltage condition will give results different than under a linear ramp speed. The typical values in the table above will differ.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
2033 Series Gas Discharge Tube Surge Protector
16.3 ± 0.5
(.642 ± .020)
3312 - 2 mm SMD Trimming Potentiometer
B140
8.0 ± 0.3
(.315 ± .012)
16.3 ± 0.5
(.642 ± .020)
B140
8.0 ± 0.3
(.315 ± .012)
0.5
(.020)
0.5
(.020)
9.3 ± 0.3
(.366 ± .012)
DIA.
Product Dimensions
9.3 ± 0.3
(.366 ± .012)
9.5 ± 0.3
DIA.
(.374 ± .012)
2033
0.5 ± 0.1
(.020 ±.004)
4.0
(.157)
8.4 ± 0.2
(.331 ± .008)
4.0
(.157)
8.4 ± 0.2
(.331 ± .008)
9.5 ± 0.3
(.374 ± .012)
2033
0.5 ± 0.1
(.020 ±.004)
DIMENSIONS:
MM
(INCHES)
Recommended Pad Layout
17.4
(.685)
6.0
(.236)
17.4
(.685)
DIMENSIONS:
MM
(INCHES)
6.0
(.236)
3.18
(.125)
1.5
(.059)
Packaging Specifications
The Model 2033-xx-G5 ships standard
bulk, 100 pieces per plastic tray,
500 pieces per box.
Tape and Reel option available;
250 pieces per 13-inch reel.
3.18
(.125)
16.00 ± 0.10
(.630 ± .004)
1.75 ± 0.10
(.069 ± .004)
1.5
(.059)
2.00 ± 0.10
(.079 ± .004)
4.00 ± 0.10
(.157 ± .004)
DIA.
1.50 +0.10/-0
(.059 +.004/-0)
32.00 ± 0.30
(1.260 ± .012)
14.20 ± 0.10
(.559 ± .004)
17.00
(.669)
28.40 ± 0.10
(1.118 ± .004)
8.60
(.339)
9.90
(3.90)
10.40
(.409)
0.50
(.020)
DIMENSIONS:
MM
(INCHES)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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