MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1511/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1511T1 is designed for broadband commercial and industrial
applications at frequencies to 175 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
D
•
Specified Performance @ 175 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
G
•
Characterized with Series Equivalent Large–Signal
Impedance Parameters
•
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
S
•
RF Power Plastic Surface Mount Package
•
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1511T1
175 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
40
±20
4
62.5
0.5
–65 to +150
150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula P
D
=
TJ – TC
R
θJC
Symbol
R
θJC
Max
2
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF1511T1
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 35 Vdc, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 7.5 Vdc, I
D
= 170
µA)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 175 MHz)
Drain Efficiency
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 175 MHz)
G
ps
η
10
50
11.5
55
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
100
53
8
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
1.0
—
1.6
0.4
2.1
—
Vdc
Vdc
I
DSS
I
GSS
—
—
—
—
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF1511T1
2
MOTOROLA RF DEVICE DATA
V
GG
C8
C7
+
C6
R4
B1
R3
C18
L4
C5
B2
C17
C16
+
C15
V
DD
R2
N1
RF
INPUT
C1
R1
Z1
L1
C2
Z2
L2
C3
Z3
Z4
Z5
DUT
Z6
Z7
Z8
L3
Z9
Z10
C14
N2
RF
OUTPUT
C9
C4
C10
C11
C12
C13
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
C1, C5, C18 120 pF, 100 mil Chip Capacitor
C2, C10, C12 0 to 20 pF, Trimmer Capacitor
C3
33 pF, 100 mil Chip Capacitor
C4
68 pF, 100 mil Chip Capacitor
C6, C15
10
µF,
50 V Electrolytic Capacitor
C7, C16
1,200 pF, 100 mil Chip Capacitor
C8, C17
0.1
µF,
100 mil Chip Capacitor
C9
150 pF, 100 mil Chip Capacitor
C11
43 pF, 100 mil Chip Capacitor
C13
24 pF, 100 mil Chip Capacitor
C14
300 pF, 100 mil Chip Capacitor
L1, L3
12.5 nH, A04T, Coilcraft
L2
26 nH, 4 Turn, Coilcraft
L4
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mount
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
15
Ω,
0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
1.0 kΩ, 0805 Chip Resistor
33 kΩ, 1/8 W Resistor
0.200″ x 0.080″ Microstrip
0.755″ x 0.080″ Microstrip
0.300″ x 0.080″ Microstrip
0.065″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.095″ x 0.080″ Microstrip
0.418″ x 0.080″ Microstrip
1.057″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 1. 135 – 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 – 175 MHz
10
Pout , OUTPUT POWER (WATTS)
8
6
4
2
V
DD
= 7.5 V
0
0
0.1
0.2
0.3
0.4
0.5
P
in
, INPUT POWER (WATTS)
0.6
0.7
-25
1
2
3
6
7
4
5
P
out
, OUTPUT POWER (WATTS)
8
9
10
-5
V
DD
= 7.5 V
IRL, INPUT RETURN LOSS (dB)
155 MHz
135 MHz
175 MHz
-10
135 MHz
-15
175 MHz
155 MHz
-20
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MOTOROLA RF DEVICE DATA
MRF1511T1
3
TYPICAL CHARACTERISTICS, 135 – 175 MHz
16
14
12
10
8
V
DD
= 7.5 V
6
1
2
3
6
7
8
5
4
P
out
, OUTPUT POWER (WATTS)
9
10
155 MHz
135 MHz
175 MHz
Eff, DRAIN EFFICIENCY (%)
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
P
out
, OUTPUT POWER (WATTS)
V
DD
= 7.5 V
8
9
10
135 MHz
175 MHz
155 MHz
GAIN (dB)
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
12
Pout , OUTPUT POWER (WATTS)
11
Eff, DRAIN EFFICIENCY (%)
10
9
8
7
6
5
4
0
200
V
DD
= 7.5 V
P
in
= 27 dBm
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
155 MHz
135 MHz
175 MHz
80
70
155 MHz
60
135 MHz
175 MHz
50
V
DD
= 7.5 V
P
in
= 27 dBm
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
40
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
14
Pout , OUTPUT POWER (WATTS)
12
10
8
6
4
2
4
6
8
10
12
I
DQ
= 150 mA
P
in
= 27 dBm
14
16
175 MHz
135 MHz
155 MHz
80
70
155 MHz
60
50
40
30
135 MHz
175 MHz
Eff, DRAIN EFFICIENCY (%)
I
DQ
= 150 mA
P
in
= 27 dBm
4
6
8
10
12
14
16
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1511T1
4
MOTOROLA RF DEVICE DATA
V
GG
C8
C7
+
C6
R4
B1
R3
C16
L4
C5
B2
C15
C14
+
C13
V
DD
R2
N1
C1
R1
Z1
L1
C2
Z2
Z3
C3
Z4
Z5
DUT
Z6
Z7
Z8
L3
Z9
Z10
C12
N2
RF
OUTPUT
RF
INPUT
C9
C4
C10
C11
B1, B2
C1, C12
C2
C3, C10
C4
C5, C16
C6, C13
C7, C14
C8, C15
C9
C11
L1
L2
L3
Short Ferrite Bead, Fair Rite Products
(2743021446)
330 pF, 100 mil Chip Capacitor
43 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
24 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
10
µF,
50 V Electrolytic Capacitor
1,200 pF, 100 mil Chip Capacitor
0.1
µF,
100 mil Chip Capacitor
380 pF, 100 mil Chip Capacitor
75 pF, 100 mil Chip Capacitor
82 nH, Coilcraft
55.5 nH, 5 Turn, Coilcraft
39 nH, 6 Turn, Coilcraft
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
Type N Flange Mount
15
Ω,
0805 Chip Resistor
51
Ω,
1/2 W Resistor
100
Ω,
0805 Chip Resistor
33 kΩ, 1/8 W Resistor
0.136″ x 0.080″ Microstrip
0.242″ x 0.080″ Microstrip
1.032″ x 0.080″ Microstrip
0.145″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.134″ x 0.080″ Microstrip
0.490″ x 0.080″ Microstrip
0.872″ x 0.080″ Microstrip
0.206″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 10. 66 – 88 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 66 – 88 MHz
10
77 MHz
Pout , OUTPUT POWER (WATTS)
88 MHz
66 MHz
IRL, INPUT RETURN LOSS (dB)
8
6
4
2
V
DD
= 7.5 V
0
0
0.1
0.2
0.3
0.4
0.5
P
in
, INPUT POWER (WATTS)
0.6
0.7
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
1
2
3
66 MHz
77 MHz
4
5
6
7
P
out
, OUTPUT POWER (WATTS)
8
9
10
88 MHz
V
DD
= 7.5 V
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss
versus Output Power
MOTOROLA RF DEVICE DATA
MRF1511T1
5
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