product is not designed protection against radioactive rays
1/29
TSZ02201-0R2R0G100750-1-2
6.Oct.2015 Rev.001
BR25A512-3M
Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
Power Dissipation
Storage Temperature
Operating Temperature
Input Voltage /
Output Voltage
Junction Temperature
Electrostatic discharge
voltage
(human body model)
Symbol
V
CC
Pd
Tstg
Topr
‐
Tjmax
V
ESD
Ratings
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
0.33 (TSSOP-B8)
- 65 to +150
- 40 to +105
- 0.3 to Vcc+1.0
150
-4000 to +4000
Unit
V
W
°C
°C
V
°C
V
Remarks
Datasheet
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.3mW to be reduced per 1°C.
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not under -1.0V.
Junction temperature at the storage condition
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, Vcc=2.5V to 5.5V)
Parameter
Write Cycles
(Note1)
Data Retention
(Note1)
(Note1) Not 100% TESTED
Min
1,000,000
150,000
100
20
Limits
Typ
-
-
-
-
Max
-
-
-
-
Unit
Times
Times
Years
Years
Condition
Ta≤25°C
Ta≤105°C
Ta≤25°C
Ta≤105°C
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Bypass capacitor
Symbol
Vcc
V
IN
C
Ratings
Min
2.5
0
0.1
Max
5.5
V
CC
-
Unit
V
V
µF
Input / Output Capacity (Ta=25°C, frequency=5MHz)
Parameter
Input Capacity
(Note1)
Output Capacity
(Note1)
(Note1) Not 100% TESTED.
Symbol
C
IN
C
OUT
Min
-
-
Max
8
8
Unit
pF
Conditions
V
IN
=GND
V
OUT
=GND
DC Characteristics (Unless otherwise specified, Ta=-40°C to +105°C, Vcc=2.5V to 5.5V)
Parameter
Input High Voltage
Input Low Voltage
Output Low Voltage
Output High Voltage
Input Leakage Current
Output Leakage Current
Supply Current (Write)
I
CC2
Supply Current (Read)
Standby Current
I
CC3
I
SB
-
-
-
-
-
-
2
4
10
mA
mA
µA
Symbol
V
IH
V
IL
V
OL
V
OH
I
LI
I
LO
I
CC1
Min
0.7 x Vcc
-0.3
(Note1)
0
Vcc-0.2
-1
-1
-
Limits
Typ
-
-
-
-
-
-
-
Max
Vcc+1.0
0.3 x Vcc
0.4
Vcc
1
1
1.5
Unit
V
V
V
V
µA
µA
mA
Conditions
I
OL
=3.0mA
I
OH
=-2.0mA
V
IN
=0 to Vcc
V
OUT
=0 to Vcc, CSB=Vcc
Vcc=2.5V, f
SCK
=5MHz, t
E/W
=5ms
Byte Write, Page Write, Write Status Register
Vcc=5.5V, f
SCK
=10MHz, t
E/W
=5ms
Byte Write, Page Write, Write Status Register
Vcc=5.5V, f
SCK
=10MHz, SO=OPEN
Read, Read Status Register
VIH/VIL=0.9Vcc/0.1Vcc
Vcc=5.5V, SO=OPEN
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND
(Note1) When the pulse width is 50ns or less, it is -1.0V.
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
