CMT09N20
P
OWER
MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
FEATURES
!
!
!
!
!
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
PIN CONFIGURATION
TO-220
SYMBOL
D
Top View
G ATE
SO URCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT09N20N220
Package
TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed (Note 1)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derate above 25℃
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
E
AS
I
AR
E
AR
dv/dt
T
J
, T
STG
θ
JC
θ
JA
T
L
Symbol
I
D
I
DM
V
GS
P
D
Value
9.0
36
±20
74
0.59
56
9.0
7.4
5.0
-55 to 150
1.70
62
300
℃
V
W
W/℃
mJ
A
mJ
V/ns
℃
℃/W
Unit
A
2002/09/17
Preliminary
Champion Microelectronic Corporation
Page 1
CMT09N20
P
OWER
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT09N20
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 200V, V
GS
= 0 V)
(V
DS
= 160V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= -20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 5.4A) (Note 4)
Forward Transconductance (V
DS
= 50V, I
D
= 5.4 A) (Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 160V, I
D
= 5.9A
V
GS
= 10 V) (Note 4)
(V
DD
= 100 V, I
D
= 5.9 A,
R
G
= 12Ω, R
D
= 16Ω) (Note 4)
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
Symbol
V
(BR)DSS
I
DSS
25
250
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
4.5
7.5
3.8
800
240
76
9.4
28
39
20
43
7.0
23
2.0
100
-100
4.0
0.40
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Min
200
Typ
Max
Units
V
μA
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
I
F
= 5.9A, di/dt = 100A/µs , T
J
= 25℃
(Note 4)
I
S
= 9.0A, V
GS
= 0 V, T
J
= 25℃ (Note 4)
Q
rr
t
on
t
rr
V
SD
1.1
**
170
2.2
340
1.5
µC
ns
V
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) V
DD
= 100V, V
GS
= 10V , starting T
J
= 25℃, L=1.38mH, R
G
= 25Ω, I
AS
= 9.0A
(3) I
SD
≦
9.0A, di/dt
≦
120A/µs, V
DD
≦
V
(BR)DSS
, T
J
≦
150℃
(4) Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2002/09/17
Preliminary
Champion Microelectronic Corporation
Page 2
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