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SF44GHR0

产品描述Rectifiers 4A, 200V, 35NS, SUPER FAST RECTIFIER
产品类别半导体    分立半导体   
文件大小355KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SF44GHR0概述

Rectifiers 4A, 200V, 35NS, SUPER FAST RECTIFIER

SF44GHR0规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
RoHSDetails
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
DO-201AD-2
Vr - Reverse Voltage200 V
If - Forward Current4 A
类型
Type
Fast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1 V
Max Surge Current125 A
Ir - Reverse Current5 uA
Recovery Time35 ns
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
1250
单位重量
Unit Weight
0.039507 oz

文档预览

下载PDF文档
SF41G - SF48G
Taiwan Semiconductor
CREAT BY ART
4A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-201AD
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
100
25
- 55 to +150
- 55 to +150
1.0
5
500
35
80
SF
41G
50
35
50
SF
42G
100
70
100
SF
43G
150
105
150
SF
44G
200
140
200
4
125
1.3
1.7
SF
45G
300
210
300
SF
46G
400
280
400
SF
47G
500
350
500
SF
48G
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: F1511

 
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