CAT22C10
256-Bit Nonvolatile CMOS Static RAM
FEATURES
■
Single 5V Supply
■
Fast RAM Access Times:
H
GEN
FR
ALO
EE
LE
■
Low CMOS Power Consumption:
A
D
F
R
E
E
TM
–200ns
–300ns
■
Infinite EEPROM to RAM Recall
■
CMOS and TTL Compatible I/O
■
Power Up/Down Protection
■
100,000 Program/Erase Cycles (E
2
PROM)
–Active: 40mA Max.
–Standby: 30
µ
A Max.
■
JEDEC Standard Pinouts:
–18-pin DIP
–16-pin SOIC
■
10 Year Data Retention
■
Commercial, Industrial and Automotive
Temperature Ranges
■
"Green" Package Options Available
DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
EEPROM array which allows for easy transfer of data
from RAM array to EEPROM (STORE) and from
EEPROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5µs. The CAT22C10 features unlimited
RAM write operations either through external RAM
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when V
CC
is less than 3.0V.
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (EEPROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-pin plastic DIP and 16-
pin SOIC packages.
PIN CONFIGURATION
DIP Package (P, L)
SOIC Package (J, W)
A4
A3
A2
A1
A0
CS
Vss
STORE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Vcc
A5
I/O4
I/O3
I/O2
I/O1
WE
RECALL
PIN FUNCTIONS
Pin Name
A
0
–A
5
I/O
0
–I/O
3
WE
CS
RECALL
STORE
V
CC
V
SS
NC
Function
Address
Data In/Out
Write Enable
Chip Select
Recall
Store
+5V
Ground
No Connect
NC
A4
A3
A2
A1
A0
CS
Vss
STORE
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
Vcc
NC
A5
I/O3
I/O2
I/O1
I/O0
WE
RECALL
© 2004 by Catalyst Semiconductor, Inc., Patent Pending
Characteristics subject to change without notice
Doc. No. 1082, Rev. O
CAT22C10
BLOCK DIAGRAM
EEPROM ARRAY
A0
A1
A2
A3
A4
A5
STORE
RECALL
ROW
STATIC RAM
STORE
SELECT
ARRAY
RECALL
COLUMN SELECT
CONTROL
LOGIC
READ/WRITE
CIRCUITS
CS
WE
I/O0 I/O1 I/O2 I/O3
MODE SELECTION
(1)(2)(3)
Input
Mode
Standby
RAM Read
RAM Write
(EEPROM→RAM)
(EEPROM→RAM)
(RAM→EEPROM)
(RAM→EEPROM)
POWER-UP TIMING
(4)
Symbol
VCCSR
Parameter
V
CC
Slew Rate
Min.
0.5
Max.
0.005
Units
V/ms
CS
H
L
L
X
H
X
H
WE
X
H
L
H
X
H
X
RECALL
H
H
H
L
L
H
H
STORE
H
H
H
H
H
L
L
I/O
Output High-Z
Output Data
Input Data
Output High-Z RECALL
Output High-Z RECALL
Output High-Z STORE
Output High-Z STORE
Note:
(1)
RECALL
signal has priority over
STORE
signal when both are applied at the same time.
(2)
STORE
is inhibited when
RECALL
is active.
(3) The store operation is inhibited when V
CC
is below
≈
3.0V.
(4) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 1082, Rev. O
2
CAT22C10
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
.............. -2.0 to +VCC +2.0V
V
CC
with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(1)
T
DR(1)
V
ZAP(1)
I
LTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
100,000
10
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Units
Cycles/Byte
Years
Volts
mA
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
V
CC
= +5V
±10%,
unless otherwise specified.
Limits
Symbol
I
CC
Parameter
Current Consumption
(Operating)
Current Consumption
(Standby)
Input Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
RAM Data Holding Voltage
1.5
2
0
2.4
0.4
5.5
Min.
Typ.
Max.
40
Unit
mA
Conditions
All Inputs = 5.5V
T
A
= 0°C
All I/O’s Open
CS = V
CC
All I/O’s Open
0
≤
V
IN
≤
5.5V
0
≤
V
OUT
≤
5.5V
I
SB
I
LI
I
LO
V
IH
V
IL
V
OH
V
OL
V
DH
30
10
10
V
CC
0.8
µA
µA
µA
V
V
V
V
V
I
OH
= –2mA
I
OL
= 4.2mA
V
CC
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz, V
CC
= 5V
Symbol
C
I/O(1)
C
IN(1)
Parameter
Input/Output Capacitance
Input Capacitance
Max.
10
6
Unit
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1V to V
CC
+1V.
3
Doc. No. 1082, Rev. O
CAT22C10
A.C. CHARACTERISTICS, Write Cycle
V
CC
= +5V
±10%,
unless otherwise specified.
22C10-20
Symbol
t
WC
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WZ(1)
t
OW
Parameter
Write Cycle Time
CS Write Pulse Width
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid Time
Data Hold Time
Output Disable Time
Output Enable Time
0
Min.
200
150
50
150
25
100
0
100
0
Max.
22C10-30
Min.
300
150
50
150
25
100
0
100
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
C
L
= 100pF
+1TTL gate
V
OH
= 2.2V
V
OL
= 0.65V
V
IH
= 2.2V
V
IL
= 0.65V
Conditions
A.C. CHARACTERISTICS, Read Cycle
V
CC
= +5V
±10%,
unless otherwise specified.
22C10-20
Symbol
t
RC
t
AA
t
CO
t
OH
t
LZ(1)
t
HZ(1)
Parameter
Read Cycle Time
Address Access Time
CS Access Time
Output Data Hold Time
CS Enable Time
CS Disable Time
0
0
100
Min.
200
200
200
0
0
100
Max.
22C10-30
Min.
300
300
300
Max.
Unit
ns
ns
ns
ns
ns
ns
Conditions
C
L
= 100pF
+1TTL gate
V
OH
= 2.2V
V
OL
= 0.65V
V
IH
= 2.2V
V
IL
= 0.65V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 1082, Rev. O
4
CAT22C10
A.C. CHARACTERISTICS, Store Cycle
V
CC
= +5V
±10%,
unless otherwise specified.
Limits
Symbol
t
STC
t
STP
t
STZ(1)
t
OST(1)
Parameter
Store Time
Store Pulse Width
Store Disable Time
Store Enable Time
0
200
100
Min.
Max.
10
Units
ms
ns
ns
ns
C
L
= 100pF + 1TTL gate
V
OH
= 2.2V, V
OL
= 0.65V
V
IH
= 2.2V, V
IL
= 0.65V
Conditions
A.C. CHARACTERISTICS, Recall Cycle
V
CC
= +5V
±10%,
unless otherwise specified.
Limits
Symbol
t
RCC
t
RCP
t
RCZ
t
ORC
t
ARC
Parameter
Recall Cycle Time
Recall Pulse Width
Recall Disable Time
Recall Enable Time
Recall Data Access Time
0
1.1
Min.
1.4
300
100
Max.
Units
µs
ns
ns
ns
µs
C
L
= 100pF + 1TTL gate
V
OH
= 2.2V, V
OL
= 0.65V
V
IH
= 2.2V, V
IL
= 0.65V
Conditions
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
5
Doc. No. 1082, Rev. O
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