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SF47G R0

产品描述Rectifiers 4A, 500V, 35NS, SUPER FAST RECTIFIER
产品类别半导体    分立半导体   
文件大小355KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SF47G R0概述

Rectifiers 4A, 500V, 35NS, SUPER FAST RECTIFIER

SF47G R0规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
RoHSDetails
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
DO-201AD-2
Vr - Reverse Voltage500 V
If - Forward Current4 A
类型
Type
Fast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1.7 V
Max Surge Current125 A
Ir - Reverse Current5 uA
Recovery Time35 ns
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
1250
单位重量
Unit Weight
0.039507 oz

文档预览

下载PDF文档
SF41G - SF48G
Taiwan Semiconductor
CREAT BY ART
4A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-201AD
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
100
25
- 55 to +150
- 55 to +150
1.0
5
500
35
80
SF
41G
50
35
50
SF
42G
100
70
100
SF
43G
150
105
150
SF
44G
200
140
200
4
125
1.3
1.7
SF
45G
300
210
300
SF
46G
400
280
400
SF
47G
500
350
500
SF
48G
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: F1511

 
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