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SFS1004G RNG

产品描述Rectifiers 10A, 200V, 35NS, DUAL RECTIFIER
产品类别半导体    分立半导体   
文件大小368KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SFS1004G RNG概述

Rectifiers 10A, 200V, 35NS, DUAL RECTIFIER

SFS1004G RNG规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TO-263AB-2
Vr - Reverse Voltage200 V
If - Forward Current10 A
类型
Type
Fast Recovery Rectifiers
ConfigurationDual Common Cathode
Vf - Forward Voltage0.975 V
Max Surge Current125 A
Ir - Reverse Current1 uA
Recovery Time35 ns
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
800
单位重量
Unit Weight
0.048678 oz

文档预览

下载PDF文档
SFS1001G - SFS1008G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Low forward voltage drop
- Ideal for automated placement
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-263AB (D PAK)
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.37 g (approximately)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFS
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 5 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
2
- 55 to +150
- 55 to +150
0.975
1
200
35
50
G
50
35
50
SFS
G
100
70
100
SFS
G
150
105
150
SFS
G
200
140
200
10
125
1.3
1.7
SFS
G
300
210
300
SFS
G
400
280
400
SFS
G
500
350
500
SFS
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
G
600
420
600
1001 1002 1003 1004 1005 1006 1007 1008
Document Number: DS_D1405076
Version: H15

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