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SMBJ22CA-Q

产品描述ESD Suppressors / TVS Diodes 22volts 600W 5% Bi-Dir. AEC-Q101
产品类别分立半导体    二极管   
文件大小328KB,共5页
制造商Bourns
官网地址http://www.bourns.com
标准
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SMBJ22CA-Q概述

ESD Suppressors / TVS Diodes 22volts 600W 5% Bi-Dir. AEC-Q101

SMBJ22CA-Q规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Bourns
包装说明R-PDSO-C2
Reach Compliance Codenot_compliant
Factory Lead Time15 weeks
Samacsys DescriptionSMBJ-Q Transient Voltage Suppressor Diode Series, Bi-Directional
其他特性PRSM-MIN, UL RECOGNIZED
最大击穿电压26.9 V
最小击穿电压24.4 V
击穿电压标称值25.65 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
参考标准AEC-Q101
最大重复峰值反向电压22 V
最大反向电流1 µA
反向测试电压22 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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PL
IA
NT
Features
n
Surface Mount SMB package
n
Standoff Voltage: 12 to 58 volts
n
Power Dissipation: 600 watts
n
RoHS compliant*
n
AEC-Q101 compliant**
F
RE
E
Applications
n
Protection of power buses
n
Protection of I/O interfaces
n
Overvoltage transient protection
n
Automotive
*R
oH
S
C
OM
– Entertainment applications
– Comfort applications
n
Telecom, computer, industrial and
consumer electronics applications
LE
AD
SMBJ-Q Transient Voltage Suppressor Diode Series
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 12 V up to 58 V. Typical fast
response times are less than 1.0 picosecond from 0 V to Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Symbol
P
PK
I
FSM
T
J
Value
600
100
-55 to +150
-55 to +150
Unit
Watts
Amps
°C
°C
T
STG
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Mounted on 5.0 mm
2
(0.03 mm thick) copper pads to each terminal.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA:
Tel: +36 88 520 390 • Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
**”Q” part number suffix indicates AEC-Q101 compliance.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.

 
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