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NSV1C301ET4G-VF01

产品描述Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V
产品类别半导体    分立半导体   
文件大小67KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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NSV1C301ET4G-VF01概述

Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V

NSV1C301ET4G-VF01规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
DPAK-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max100 V
Collector- Base Voltage VCBO140 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.115 V
Maximum DC Collector Current6 A
Gain Bandwidth Product fT120 MHz
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max360
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Continuous Collector Current3 A
DC Collector/Base Gain hfe Min120
Pd-功率耗散
Pd - Power Dissipation
33 W
工厂包装数量
Factory Pack Quantity
2500
单位重量
Unit Weight
0.012381 oz

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NSS1C301ET4G
100 V, 3.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
www.onsemi.com
100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW V
CE(sat)
TRANSISTOR
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
1 2
Complement to NSS1C300ET4G
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CBO
V
CEO
V
EB
I
C
I
CM
I
B
P
D
33
0.26
P
D
2.1
0.017
T
J
, T
stg
−65 to +150
W
W/°C
°C
W
W/°C
Y
WW
1C31E
G
Max
140
100
6.0
3.0
6.0
0.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
1C31EG
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Device
NSS1C301ET4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
2500/
Tape & Reel
2500/
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
NSV1C301ET4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
March, 2016 − Rev. 5
Publication Order Number:
NSS1C301E/D

NSV1C301ET4G-VF01相似产品对比

NSV1C301ET4G-VF01 NSV1C301ET4G
描述 Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V
Product Attribute Attribute Value Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美) ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details
安装风格
Mounting Style
SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
DPAK-3 DPAK-3
Transistor Polarity NPN NPN
Configuration Single Single
Collector- Emitter Voltage VCEO Max 100 V 100 V
Collector- Base Voltage VCBO 140 V 140 V
Emitter- Base Voltage VEBO 6 V 6 V
Collector-Emitter Saturation Voltage 0.115 V 0.115 V
Maximum DC Collector Current 6 A 6 A
Gain Bandwidth Product fT 120 MHz 120 MHz
最小工作温度
Minimum Operating Temperature
- 65 C - 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C
DC Current Gain hFE Max 360 360
Continuous Collector Current 3 A 3 A
DC Collector/Base Gain hfe Min 120 120
Pd-功率耗散
Pd - Power Dissipation
33 W 33 W
工厂包装数量
Factory Pack Quantity
2500 2500
单位重量
Unit Weight
0.012381 oz 0.009185 oz
系列
Packaging
Reel Reel

 
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