CMLM0585
Multi Discrete Module
™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0585 is a
Multi Discrete Module™ consisting of a single P-Channel
enhancement-mode MOSFET and a low VF Schottky
diode packaged in a space saving SOT-563 surface
mount case. This device is designed for small signal
general purpose applications where size and opertional
efficiency are prime requirements.
MARKING CODE: 85C
SOT-563 CASE
APPLICATIONS:
•
•
•
•
DC-DC converters
Boost converters
Motor drive controls
Battery powered portable equipment
FEATURES:
• High current MOSFET (ID=650mA)
• ESD protection up to 1800V
(Human Body Model)
• Low rDS(on) MOSFET (0.5Ω MAX @ VGS=2.5V)
• Low VF Schottky diode (0.47V MAX @ 0.5A)
SYMBOL
PD
PD
PD
TJ, Tstg
Θ
JA
SYMBOL
VDS
VGS
ID
SYMBOL
VRRM
IF
IFRM
IFSM
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
UNITS
V
V
mA
UNITS
V
mA
A
A
MAXIMUM RATINGS - CASE:
(TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
MAXIMUM RATINGS - Q1:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
MAXIMUM RATINGS - D1:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
20
8.0
650
40
500
3.5
10
ELECTRICAL CHARACTERISTICS - Q1:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=250mA
VGS=4.5V, ID=350mA
0.25
rDS(ON)
rDS(ON)
VGS=2.5V, ID=300mA
0.37
rDS(ON)
VGS=1.8V, ID=150mA
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
MAX
10
100
1.0
1.1
0.36
0.5
0.8
UNITS
μA
nA
V
V
V
Ω
Ω
Ω
R5 (1-July 2015)
CMLM0585
Multi Discrete Module
™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
gFS
VDS=10V, ID=200mA
200
Crss
VDS=16V, VGS=0, f=1.0MHz
25
Ciss
VDS=16V, VGS=0, f=1.0MHz
100
Coss
VDS=16V, VGS=0, f=1.0MHz
21
Qg(tot)
VDS=10V, VGS=4.5V, ID=200mA
1.2
Qgs
VDS=10V, VGS=4.5V, ID=200mA
0.24
Qgd
VDS=10V, VGS=4.5V, ID=200mA
0.36
ton
VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω
38
toff
VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω
48
ELECTRICAL CHARACTERISTICS - D1:
(TA=25°C)
SYMBOL TEST CONDITIONS
IR
VR=10V
IR
VR=30V
BVR
IR=500μA
VF
IF=100μA
VF
IF=1.0mA
VF
IF=10mA
VF
IF=100mA
VF
IF=500mA
CJ
VR=1.0V, f=1.0MHz
MIN
TYP
MAX
20
100
0.13
0.21
0.27
0.35
0.47
50
UNITS
mS
pF
pF
pF
nC
nC
nC
ns
ns
40
UNITS
μA
μA
V
V
V
V
V
V
pF
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: 85C
R5 (1-July 2015)
w w w. c e n t r a l s e m i . c o m
CMLM0585
Multi Discrete Module
™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
MOSFET TYPICAL ELECTRICAL CHARACTERISTICS
R5 (1-July 2015)
w w w. c e n t r a l s e m i . c o m
CMLM0585
Multi Discrete Module
™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
DIODE TYPICAL ELECTRICAL CHARACTERISTICS
R5 (1-July 2015)
w w w. c e n t r a l s e m i . c o m
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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