VS-HFA08TA60C-M3
www.vishay.com
Vishay Semiconductors
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 2 x 4 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed
and
®
-JESD47
JEDEC
3L
TO-220AB
Base
common
cathode
4
qualified
according
to
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
2
1 Common
3
Anode cathode Anode
• Reduced parts count
DESCRIPTION
VS-HFA08TA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60C... is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Circuit configuration
3L TO-220AB
2x4A
600 V
1.4 V
17 ns
150 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
per leg
per device
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
4
8
25
16
25
10
-55 to +150
W
°C
A
UNITS
V
Revision: 02-Aug-17
Document Number: 96202
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08TA60C-M3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
R
= 100 μA
I
F
= 4.0 A
MIN.
600
-
See fig. 1
-
-
See fig. 2
See fig. 3
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4.0
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8.0
-
μA
pF
nH
V
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
V
FM
I
F
= 8.0 A
I
F
= 4.0 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
I
RM
C
T
L
S
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
b
See fig. 11 and 12
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
17
28
38
2.9
3.7
40
70
280
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
A/μs
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style 3L TO-220AB
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.5
2.0
0.07
-
MAX.
300
5.0
80
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
K/W
UNITS
°C
HFA08TA60C
Revision: 02-Aug-17
Document Number: 96202
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08TA60C-M3
www.vishay.com
Vishay Semiconductors
1000
100
I
R
- Reverse Current (µA)
100
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
I
F
- Instantaneous
Forward Current (A)
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
0.01
0.001
0.1
0
1
2
3
4
5
6
0
100
200
300
400
500
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
C
T
- Junction Capacitance (pF)
10
T
J
= 25 °C
1
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Response
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
0.01
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 02-Aug-17
Document Number: 96202
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08TA60C-M3
www.vishay.com
Vishay Semiconductors
200
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 8 A
I
F
= 4 A
50
45
40
35
30
25
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
160
Q
rr
(nC)
t
rr
(ns)
120
80
40
20
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
14
12
10
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
1000
I
F
= 8 A
I
F
= 4 A
I
rr
(A)
8
6
4
2
0
100
I
F
= 8 A
I
F
= 4 A
dI
(rec)M
/dt (A/µs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
100
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 02-Aug-17
Document Number: 96202
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08TA60C-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
4
5
4
6
7
7
HF
2
-
-
-
-
-
-
-
-
A
3
08
4
TA
5
60
6
C
7
-M3
8
Vishay
Semiconductors
product
HEXFRED
®
family
Electron irradiated
Current rating (08 = 8 A)
Package:
TA = 3L TO-220AB
Voltage rating (60 = 600 V)
Circuit configuration:
C = common cathode
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-HFA08TA60C-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96154
www.vishay.com/doc?95028
Revision: 02-Aug-17
Document Number: 96202
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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