PD - 91394E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM7460SE
Radiation Level R
DS(on)
100K Rads (Si)
0.32Ω
I
D
18A
IRHM7460SE
JANSR2N7392 500V
N-CHANNEL
REF: MIL-PRF-19500/661
RAD Hard HEXFET
TECHNOLOGY
®
QPL Part Number
JANSR2N7392
International Rectifiers RADHard
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TM
HEXFET
®
TO-254AA
Features:
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
18
11.7
72
250
2.0
±20
500
18
25
3.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
g
www.irf.com
1
5/17/01
IRHM7460SE
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Min
500
2.5
6.0
Electrical Characteristics
Parameter
Typ Max Units
0.66
6.8
0.32
0.36
4.5
50
250
100
-100
180
30
95
29
93
90
59
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 11.7A
➃
VGS = 12V, ID = 18A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 11.7A
➃
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 250V
VDD =250V, ID =18A,
VGS =12V, RG =
2.35Ω
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3500
730
260
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
18
72
1.8
800
16
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 18A, VGS = 0V
➃
Tj = 25°C, IF = 18A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
M i n Typ Max Units
0.50
0.21
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHM7460SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
/5 JD
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source#
$
On-State Resistance (TO-3)
Static Drain-to-Source#
$
On-State Resistance (TO-254)
Diode Forward Voltage#
$
Min
500
2.0
100K Rads (Si)
Max
4.5
100
-100
50
0.32
0.32
1.8
Units
V
nA
µA
Ω
Ω
V
Test Conditions
"
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 400V, V
GS
=0V
V
GS
= 12V, I
D
= 11.7A
V
GS
= 12V, I
D
= 11.7A
V
GS
= 0V, I
D
= 18A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
Ni
LET
Energy
MeV/(mg/cm )) (MeV)
28
285
36.8
305
26.6
265
400
300
VDS
200
100
0
0
-5
-10
VGS
-15
-20
V
,5
(V)
Range
(µm)
@V
/5
=0V @V
/5
=-5V @V
/5
=-10V @V
/5
=-15V @V
/5
=-20V
43
375
375
375
375
375
39
350
350
350
325
300
42
375
Cu
Br
Ni
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHM7460SE
Pre-Irradiation
100
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1
5.0V
1
0.1
5.0V
20us PULSE WIDTH
T
J
= 25
o
C
1
10
100
0.01
0.1
0.1
0.1
20us PULSE WIDTH
T
J
= 150
o
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 18A
I
D
, Drain-to-Source Current (A)
T
J
= 150
o
C
10
2.0
1.5
T
J
= 25
o
C
1
1.0
0.5
0.1
5.0
V
DS
= 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
11.0
12.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHM7460SE
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 18A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C, Capacitance (pF)
6000
16
Ciss
4000
12
Coss
Crss
8
2000
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
T
J
= 150
°
C
100
10us
T
J
= 25
°
C
1
100us
10
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
