POWER MOSFET THRU-HOLE (MO-036AB)
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 厂商名称 | International Rectifier ( Infineon ) |
| 零件包装代码 | DIP |
| 包装说明 | IN-LINE, R-CDIP-T14 |
| 针数 | 14 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级(Eas) | 75 mJ |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 0.75 A |
| 最大漏源导通电阻 | 1.73 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | MO-036AB |
| JESD-30 代码 | R-CDIP-T14 |
| JESD-609代码 | e0 |
| 元件数量 | 4 |
| 端子数量 | 14 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT APPLICABLE |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 3 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT APPLICABLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |

| IRFG9110 | JANTX2N7335 | JANTXV2N7335 | |
|---|---|---|---|
| 描述 | POWER MOSFET THRU-HOLE (MO-036AB) | POWER MOSFET THRU-HOLE (MO-036AB) | POWER MOSFET THRU-HOLE (MO-036AB) |
| 是否无铅 | 含铅 | 含铅 | 含铅 |
| 厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
| 零件包装代码 | DIP | DIP | DIP |
| 包装说明 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 |
| 针数 | 14 | 14 | 14 |
| Reach Compliance Code | unknown | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级(Eas) | 75 mJ | 75 mJ | 75 mJ |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 0.75 A | 0.75 A | 0.75 A |
| 最大漏源导通电阻 | 1.73 Ω | 1.73 Ω | 1.73 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | MO-036AB | MO-036AB | MO-036AB |
| JESD-30 代码 | R-CDIP-T14 | R-CDIP-T14 | R-CDIP-T14 |
| 元件数量 | 4 | 4 | 4 |
| 端子数量 | 14 | 14 | 14 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度(摄氏度) | NOT APPLICABLE | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 3 A | 3 A | 3 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT APPLICABLE | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 参考标准 | - | MIL-19500/599 | MIL-19500/599 |
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