PD - 95178
IRF7306PbF
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Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
HEXFET
®
Power MOSFET
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
DSS
= -30V
R
DS(on)
= 0.10Ω
6
5
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulsed Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
10/7/04
IRF7306PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-30
V
V
GS
= 0V, ID = -250µA
-0.037 V/°C Reference to 25°C, I
D
= -1mA
0.10
V
GS
= -10V, I
D
= -1.8A
Ω
0.16
V
GS
= -4.5V, I
D
= -1.5A
-1.0
V
V
DS
= V
GS
, I
D
= -250µA
2.5
S
V
DS
= -24V, I
D
= -1.8A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
25
I
D
= -1.8A
2.9
nC V
DS
= -24V
9.0
V
GS
= -10V, See Fig. 6 and 12
11
V
DD
= -15V
17
I
D
= -1.8A
ns
25
R
G
= 6.0Ω
18
R
D
= 8.2Ω, See Fig. 10
4.0
6.0
440
200
93
nH
pF
D
Between lead tip
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-2.5
showing the
A
G
integral reverse
-14
p-n junction diode.
S
-1.0
V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
53
80
ns
T
J
= 25°C, I
F
= -1.8A
66
99
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
-1.8A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤150°C
Surface mounted on FR-4 board, t
≤
10sec.
IRF7306PbF
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
TOP
-ID , Drain-to-Source Current (A)
10
-4.5V
-I
D
, Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150°C
1
10
100
A
-V , Drain-to-Source Voltage (V)
DS
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
T
J
= 25°C
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -3.0A
-I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
4
5
6
7
V
DS
= -15V
20µs PULSE WIDTH
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -10V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF7306PbF
1000
800
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -3.0A
V
DS
= -24V
16
C, Capacitance (pF)
600
C
iss
C
oss
12
400
8
200
C
rss
4
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 12
15
20
25
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150°C
T
J
= 25°C
1
-I
D
, Drain Current (A)
I
100us
10
1ms
0.1
0.0
0.3
0.6
0.9
V
GS
= 0V
1.2
A
1.5
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
10ms
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF7306PbF
4.0
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
2.0
-10
V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
1.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
+
-
3.0
R
G
D.U.T.
V
DD
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