MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
V
RRM
I
F
I
FM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Clamp diode part
T
C
= 25°C
Pulse
Conditions
Ratings
1200
±20
75
150
75
150
450
1200
75
150
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
V
A
A
°C
°C
V
N•m
N•m
g
(Note 2)
(Note 2)
Clamp diode part
Clamp diode part
(Note 2)
Charged part to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
G
R
th(j-c)
Q
R
th(j-c)
R
R
th(j-c’)
Q
V
FM
t
rr
Q
rr
R
th(j-c)
R
R
th(c-f)
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
External gate resistance
Thermal resistance
*1
Thermal resistance
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance
*1
Contact thermal resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 7.5mA, V
CE
= 10V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25°C
I
C
= 75A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 75A, V
GE
= 15V
V
CC
= 600V, I
C
= 75A
V
GE1
= V
GE2
= 15V
R
G
= 4.2Ω, Inductive load switching operation
I
E
= 75A
I
E
= 75A, V
GE
= 0V
IGBT part
FWDi part
Tc measured point is just under the chips
I
F
= 75A, Clamp diode part
I
F
= 75A
V
CC
= 600V, V
GE1
= V
GE2
= 15V
R
G
= 4.2Ω, Inductive load switching operation,
Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied
*2
(1/2 module)
Min.
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
1.8
1.9
—
—
—
825
—
—
—
—
—
3.1
—
—
—
—
—
—
—
3.1
—
0.07
Max.
1
7
20
2.4
—
29
1.3
0.75
—
100
50
400
300
150
—
3.2
42
0.28
0.47
0.22
*3
3.2
150
—
0.47
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
Ω
°C/W
°C/W
°C/W
V
ns
µC
°C/W
°C/W
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Mar.2002
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
T
j
=25°C
125
100
75
8.5
50
25
0
8
V
GE
=20V
9.5
9
15
11
10
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
150
3
V
GE
= 15V
2.5
2
1.5
1
0.5
0
T
j
= 25°C
T
j
= 125°C
0
50
100
150
0
0.5
1
1.5
2
2.5
3
3.5
4
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
5
T
j
= 25°C
FREE-WHEEL DIODE AND CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
T
j
= 25°C
4
EMITTER CURRENT I
E
(A)
5
3
2
10
2
7
5
3
2
3
I
C
= 150A
2
I
C
= 75A
I
C
= 30A
1
10
1
7
5
3
2
0
6
8
10
12
14
16
18
20
10
0
0.5
1
1.5
2
2.5
3
3.5
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
t
f
t
d(off)
10
1
7
5
3
2
SWITCHING TIMES (ns)
3
2
C
ies
10
2
7
5
3
2
t
d(on)
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 4.2Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
1
2
3
t
r
10
0
7
5
3
2
10
1
7
5
3
2
C
res
V
GE
= 0V
C
oes
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 0
10
5 7
10
2
COLLECTOR CURRENT I
C
(A)
Mar.2002
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part & CLAMP DIODE part)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
10
2
7
5
3
2
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7 IGBT part: Per unit base = R
th(j–c)
= 0.28°C/W
5
FWDi part: Per unit base = R
th(j–c)
= 0.47°C/W
3 CLAMP Di part: Per unit base = R
th(j–c)
= 0.47°C/W
2
7
5
3
2
7
5
3
2
7
5
3
2
I
rr
t
rr
10
0
3
2
10
1
7
5
3
2
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 4.2Ω
T
j
= 25°C
Inductive load
2
3
5 7
10
1
2
3
5 7
10
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
Single Pulse
T
C
= 25°C
10
0 0
10
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TMIE (s)
EMITTER CURRENT I
E
(A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
18
16
14
12
10
8
6
4
2
0
0
I
C
= 75A
V
CC
= 400V
V
CC
= 600V
200
400
600
800
1000 1200
GATE CHARGE Q
G
(nC)
Mar.2002
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