MITSUBISHI Nch IGBT
MITSUBISHI Nch IGBT
CT90AM-18
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR
CT90AM-18
OUTLINE DRAWING
20MAX.
Dimensions in mm
5
2
6
φ3.2
26
1
2
1
0.5
3
5.45 5.45
q
V
CES ...............................................................................
900V
q
I
C .........................................................................................
60A
q
Simple drive
q
Integrated Fast-recovery diode
q
Small tail loss
q
Low V
CE
Saturation Voltage
4.0
GATE
COLLECTOR
EMITTER
COLLECTOR
TO-3PL
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
V
GE
= 0V
Conditions
Ratings
900
±25
±30
60
120
40
250
–40 ~ +150
–40 ~ +150
20.6MIN.
2.5
Unit
V
V
V
A
A
A
W
°C
°C
Sep. 2000
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
I
GES
V
GE (th)
V
CE (sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
E
tail
I
tail
V
EC
t
rr
R
th (ch-c)
R
th (ch-c)
Parameter
(Tj = 25°C)
Test conditions
V
CE
= 900V, V
GE
= 0V
V
GE
=
±20V,
V
CE
= 0V
V
CE
= 10V, I
C
= 6mA
I
C
= 60A, V
GE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Limits
Min.
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
4.0
1.55
11000
180
125
0.05
0.10
0.20
0.30
0.6
6
—
0.5
—
—
Max.
1.0
±0.5
6.0
1.95
—
—
—
—
—
—
—
1.0
12
3.0
2.0
0.5
4.0
Unit
mA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
mJ/pls
A
V
µs
°C/W
°C/W
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance
Thermal resistance
V
CC
= 300V, I
C
= 60A, V
GE
= 15V, R
G
= 0Ω
I
CP
= 60A, T
j
= 125°C, dv/dt = 200V/µs
I
E
= 60A, V
GE
= 0V
I
E
= 60A, dis/dt = –20A/µs
Junction to case
Junction to case
Sep. 2000
FPGA/CPLD
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