CAT28C16A
16K-Bit CMOS PARALLEL EEPROM
FEATURES
I
Fast read access times: 90 ns, 120 ns, 200 ns
I
Low power CMOS cissipation:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
I
End of write detection:
DATA
polling
I
Hardware write protection
I
CMOS and TTL compatible I/O
I
10,000 or 100,000 Program/erase cycles
I
10 or 100 year data retention
I
Commercial, industrial and automotive
–Active: 25 mA Max.
–Standby: 100
µ
A Max.
I
Simple write operation:
–On-chip address and data latches
–Self-timed write cycle with auto-clear
I
Fast write cycle time: 10ms max
temperature ranges
DESCRIPTION
The CAT28C16A is a fast, low power, 5V-only CMOS
Parallel EEPROM organized as 2K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling signals the start and end of the self-timed
write cycle. Additionally, the CAT28C16A features hard-
ware write protection.
The CAT28C16A is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 10,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 24-pin DIP and SOIC or 32-pin PLCC pack-
ages.
BLOCK DIAGRAM
A4–A10
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
2,048 x 8
EEPROM
ARRAY
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING
I/O0–I/O7
A0–A3
ADDR. BUFFER
& LATCHES
COLUMN
DECODER
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1076, Rev. D
CAT28C16A
PIN CONFIGURATION
DIP Package (P, L)
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SOIC Package (J, K, W, X)
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Package (N, G)
A7
NC
NC
NC
VCC
WE
NC
4 3 2 1 32 31 30
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
29
28
27
26
25
24
23
22
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
TOP VIEW
13
21
14 15 16 17 18 19 20
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
PIN FUNCTIONS
Pin Name
A
0
–A
10
I/O
0
–I/O
7
CE
OE
WE
V
CC
V
SS
NC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
5V Supply
Ground
No Connect
MODE SELECTION
Mode
Read
Byte Write (WE Controlled)
Byte Write (CE Controlled)
Standby, and Write Inhibit
Read and Write Inhibit
H
X
CE
L
L
L
X
H
WE
H
OE
L
H
H
X
H
I/O
D
OUT
D
IN
D
IN
High-Z
High-Z
Power
ACTIVE
ACTIVE
ACTIVE
STANDBY
ACTIVE
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz, V
CC
= 5V
Symbol
C
I/O(1)
C
IN(1)
Test
Input/Output Capacitance
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 1076, Rev. D
2
CAT28C16A
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(1, 7)
T
DR(1, 7)
V
ZAP(1)
I
LTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Min
100,000
100
2000
100
Max
Units
Cycles/Byte
Years
Volts
mA
D.C. OPERATING CHARACTERISTICS
V
CC
= 5V
±10%,
unless otherwise specified.
Limits
Symbol
I
CC
I
CCC(5)
I
SB
I
SBC(6)
I
LI
I
LO
V
IH(6)
V
IL(5)
V
OH
V
OL
V
WI
Parameter
V
CC
Current (Operating, TTL)
V
CC
Current (Operating, CMOS)
V
CC
Current (Standby, TTL)
V
CC
Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
3.0
–10
–10
2
–0.3
2.4
0.4
Min
Typ
Max
35
25
1
100
10
10
V
CC
+0.3
0.8
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
I
OH
= –400µA
I
OL
= 2.1mA
Test Conditions
CE = OE = V
IL
,
f = 1/t
RC
min, All I/O’s Open
CE = OE = V
ILC
,
f = 1/t
RC
min, All I/O’s Open
CE = V
IH
, All I/O’s Open
CE = V
IHC
,
All I/O’s Open
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
,
CE = V
IH
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
(5) V
ILC
= –0.3V to +0.3V.
(6) V
IHC
= V
CC
–0.3V to V
CC
+0.3V.
(7) For the CAT28C16A-20, the minimum endurance is 10,000 cycles and the minimum data retention is 10 years.
Doc. No. 1076, Rev. D
3
CAT28C16A
A.C. CHARACTERISTICS, Read Cycle
V
CC
= 5V
±10%,
unless otherwise specified.
28C16A-90
Symbol
t
RC
t
CE
t
AA
t
OE
t
LZ(1)
t
OLZ(1)
t
HZ(1)(2)
t
OHZ(1)(2)
t
OH(1)
Parameter
Read Cycle Time
CE Access Time
Address Access Time
OE Access Time
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address Change
0
0
0
50
50
0
Min
90
90
90
50
0
0
50
50
0
Max
28C16A-12
Min
120
120
120
60
0
0
55
55
Max
28C16A-20
Min
200
200
200
80
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 1. A.C. Testing Input/Output Waveform(3)
2.4 V
INPUT PULSE LEVELS
0.45 V
0.8 V
2.0 V
REFERENCE POINTS
Figure 2. A.C. Testing Load Circuit (example)
1.3V
1N914
3.3K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
Doc. No. 1076, Rev. D
4
CAT28C16A
A.C. CHARACTERISTICS, Write Cycle
V
CC
= 5V
±10%,
unless otherwise specified.
28C16A-90
Symbol
t
WC
t
AS
t
AH
t
CS
t
CH
t
CW(2)
t
OES
t
OEH
t
WP(2)
t
DS
t
DH
t
DL
t
INIT(1)
Parameter
Write Cycle Time
Address Setup Time
Address Hold Time
CE Setup Time
CE Hold Time
CE Pulse Time
OE Setup Time
OE Hold Time
WE Pulse Width
Data Setup Time
Data Hold Time
Data Latch Time
Write Inhibit Period After Power-up
0
100
0
0
110
0
0
110
60
0
5
.05
10
100
Min
Max
5
0
100
0
0
110
0
0
110
60
0
5
.05
10
100
28C16A-12
Min
Max
5
10
100
0
0
150
15
15
150
50
10
50
5
20
28C16A-20
Min
Max
10
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
Doc. No. 1076, Rev. D
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
