CAT93C76
(Rev. A)
8K-Bit Microwire Serial EEPROM
FEATURES
I
High speed operation: 3MHz @ V
CC
I
Low power CMOS technology
I
1.8 to 5.5 volt operation
I
Selectable x8 or x16 memory organization
I
Self-timed write cycle with auto-clear
I
Software write protection
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
≥
2.5V
I
Power-up inadvertant write protection
I
1,000,000 Program/erase cycles
I
100 year data retention
I
Industrial and extended temperature ranges
I
Sequential read
I
“Green” package option available
DESCRIPTION
The CAT93C76 is an 8K-bit Serial EEPROM memory
device which is configured as either registers of 16 bits
(ORG pin at V
CC
or Not Connected) or 8 bits (ORG pin
at GND). Each register can be written (or read) serially
by using the DI (or DO) pin. The CAT93C76 is
manufactured using Catalyst’s advanced CMOS
EEPROM floating gate technology. The device is
designed to endure 1,000,000 program/erase cycles
and has a data retention of 100 years. The device is
available in 8-pin DIP, SOIC, TSSOP and 8-pad TDFN
packages.
PIN CONFIGURATION
DIP Package (P, L)
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
FUNCTIONAL SYMBOL
SOIC Package (S, V)
V
CC
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
ORG
CS
SK
DI
DO
TSSOP Package (U,Y)
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
GND
PIN FUNCTIONS
Pin Name
CS
SK
Function
Chip Select
Serial Clock Input
Serial Data Input
Serial Data Output
+1.8 to 5.5V Power Supply
Ground
Memory Organization
No Connection
TDFN Package (RD4, ZD4)
CS
1
SK
2
DI
3
DO
4
8
VCC
7
NC
6
ORG
5
GND
DI
DO
V
CC
GND
Top View
ORG
NC
Note: When the ORG pin is connected to VCC, x16 organization is
selected. When it is connected to ground, x8 organization is selected.
If the ORG pin is left unconnected, then an internal
pull-up device will select x16 organization.
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice.
Doc. No. 1090, Rev. A
CAT93C76
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55°C to +125°C
Storage Temperature ........................ -65°C to +150°C
Voltage on any Pin with
Respect to Ground
(1)
............. -2.0V to +V
CC
+2.0V
V
CC
with Respect to Ground ................ -2.0V to +7.0V
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100 mA
*COMMENT
Stresses exceeding those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. These are stress ratings only, and functional
operation of the device at these or any other conditions
outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute
maximum rating for extended periods may affect device
performance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
Min
1,000,000
100
2000
100
Typ
Max
Units
Cycles/Byte
Years
Volts
mA
D.C. OPERATING CHARACTERISTICS
V
CC
= +1.8V to +5.5V, unless otherwise specified.
Symbol
I
CC1
I
CC2
I
SB1
I
SB2
I
LI
I
LO
I
LORG
V
IL1
V
IH1
V
IL2
V
IH2
V
OL1
V
OH1
V
OL2
V
OH2
Parameter
Power Supply Current
(Write)
Power Supply Current
(Read)
Power Supply Current
(Standby) (x8 Mode)
Power Supply Current
(Standby) (x16Mode)
Input Leakage Current
Output Leakage Current
ORG Pin Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Test Conditions
f
SK
= 1MHz
V
CC
= 5.0V
f
SK
= 1MHz
V
CC
= 5.0V
CS = 0V
ORG=GND
CS=0V
ORG=Float or V
CC
V
IN
= 0V to V
CC
V
OUT
= 0V to V
CC
, CS = 0V
ORG = GND or ORG = V
CC
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
1.8V
≤
V
CC
< 4.5V
1.8V
≤
V
CC
< 4.5V
4.5V
≤
V
CC
≤
5.5V
I
OL
= 2.1mA
4.5V
≤
V
CC
≤
5.5V
I
OH
= -400µA
1.8V
≤
V
CC
< 4.5V
I
OL
= 100µA
1.8V
≤
V
CC
< 4.5V
I
OH
= -100µA
V
CC
- 0.2
2.4
0.1
-0.1
2
0
V
CC
x 0.7
Min
Typ
1
300
2
0
(5)
0
(5)
0
(5)
1
Max
3
500
10
10
10
10
10
0.8
V
CC
+ 1
V
CC
x 0.2
V
CC
+1
0.4
Units
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second.
(3) These parameters are tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on I/O pins from –1V to V
CC
+1V.
(5) 0
µA
is defined as less than 900 nA.
Doc. No. 1090, Rev. A
2
CAT93C76
POWER-UP TIMING
(1)(2)
Symbol
t
PUR
t
PUW
Parameter
Power-up to Read Operation
Power-up to Write Operation
Max
1
1
Units
ms
ms
A.C. TEST CONDITIONS
Input Rise and Fall Times
Input Pulse Voltages
Timing Reference Voltages
Input Pulse Voltages
Timing Reference Voltages
≤
50ns
0.4V to 2.4V
0.8V, 2.0V
0.2V
CC
to 0.7V
CC
0.5V
CC
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
1.8V
≤
V
CC
≤
4.5V
1.8V
≤
V
CC
≤
4.5V
NOTE:
(1) These parameters are tested initially and after a design or process change that affects the parameter.
(2) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
DEVICE OPERATION
The CAT93C76 is a 8192-bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAT93C76 can be organized as either registers of
16 bits or 8 bits. When organized as X16, seven 13-bit
instructions control the read, write and erase operations
of the device. When organized as X8, seven 14-bit
instructions control the read, write and erase
operations of the device. The CAT93C76 operates on
a single power supply and will generate on chip, the high
voltage required during any write operation.
Instructions, addresses, and write data are clocked into
the DI pin on the rising edge of the clock (SK). The DO
pin is normally in a high impedance state except when
reading data from the device, or when checking the
ready/busy status after a write operation.
The ready/busy status can be determined after the start
of a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that
the device is ready for the next instruction. If necessary,
the DO pin may be placed back into a high impedance
state during chip select by shifting a dummy “1” into the
DI pin. The DO pin will enter the high impedance state on
the falling edge of the clock (SK). Placing the DO pin into
the high impedance state is recommended in applica-
tions where the DI pin and the DO pin are to be tied
together to form a common DI/O pin.
The format for all instructions sent to the device is a
logical "1" start bit, a 2-bit (or 4-bit) opcode, 10-bit
address (an additional bit when organized X8) and for
write operations a 16-bit data field (8-bit for X8
organizations). The most significant bit of the address is
“don’t care” but it must be present.
4
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT93C76 will
come out of the high impedance state and, after sending
an initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (t
PD0
or t
PD1
).
For the CAT93C76, after the initial data word has been
shifted out and CS remains asserted with the SK clock
continuing to toggle, the device will automatically
increment to the next address and shift out the next data
word in a sequential READ mode. As long as CS is
continuously asserted and SK continues to toggle, the
device will keep incrementing to the next address
automatically until it reaches the end of the address
space, then loops back to address 0. In the sequential
READ mode, only the initial data word is preceeded by
a dummy zero bit. All subsequent data words will follow
without a dummy zero bit.
Write
After receiving a WRITE command, address and the
data, the CS (Chip Select) pin must be deselected for a
minimum of t
CSMIN
. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the
SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93C76 can be determined by selecting the device
and polling the DO pin. Since this device features Auto-
Clear before write, it is NOT necessary to erase a
memory location before it is written into.
Doc. No. 1090, Rev. A
电机控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
