BTA412Y-800ET
3Q Hi-Com Triac
13 March 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally
insulated plastic package. This "series ET" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers including
microcontrollers. It is used in applications where " high juction operating temperature " capability is
required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with sensitive gate
High blocking voltage capability
Direct interfacing with low power drives and microcontrollers
High juction operating temperature (T
j(max)
= 150 °C)
Isolated mounting base with 2500 V (RMS) isolation
Internally insulated package
Planar passivated for voltage ruggedness and reliability
Good immunity to false turn-on by dV/dt
Triggering in three quadrants only
3. Applications
•
•
•
•
•
•
Electronic thermostats (heating and cooling)
Motor controls e.g. vacuum cleaners
Refrigeration and air-conditioner compressor controls
Excellent for AC switching and phase control such as heating, lighting
Typical applications are AC solid-state switches, light, dimmers, power tools
High juction operating temperature (T
j(max)
= 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 118 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
12
140
150
Unit
V
A
A
A
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
WeEn Semiconductors
BTA412Y-800ET
3Q Hi-Com Triac
Symbol
T
j
I
GT
Parameter
junction temperature
gate trigger current
Conditions
Min
-
Typ
-
-
-
-
-
1.3
-
Max
150
10
10
10
10
1.6
-
Unit
°C
mA
mA
mA
mA
V
V/µs
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 17 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit;
Fig. 12
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 10 V/µs; gate open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 1 V/µs; gate open circuit
0.5
0.5
0.5
-
-
300
Dynamic characteristics
150
-
-
V/µs
3
-
-
A/ms
4
6
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
BTA412Y-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
13 March 2017
2 / 14
WeEn Semiconductors
BTA412Y-800ET
3Q Hi-Com Triac
6. Ordering information
Table 3. Ordering information
Type number
BTA412Y-800ET
Package
Name
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA412Y-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
13 March 2017
3 / 14
WeEn Semiconductors
BTA412Y-800ET
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
16
aaf284-001
Conditions
Min
-
Max
800
12
140
150
98
100
2
5
0.5
150
150
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 118 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
30
aaf284-002
I
T(RMS)
(A)
I
T(RMS)
(A)
118 °C
12
26
22
8
18
4
14
0
-50
0
50
100
150
T
mb
(°C)
10
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 118 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA412Y-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
13 March 2017
4 / 14
WeEn Semiconductors
BTA412Y-800ET
3Q Hi-Com Triac
P
tot
(W)
16
aaf284-003
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
116.4
T
mb(max)
(°C)
124.8
12
8
133.2
4
141.6
0
0
2
4
6
8
10
12
I
T(RMS)
(A)
150
14
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
160
aaf284-004
I
T
I
TSM
t
120
T
T
j(init)
= 25 °C max
80
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA412Y-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
13 March 2017
5 / 14
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