Silicon Carbide Power Schottky Diode
CDBJSC10650-G
Reverse Voltage: 650 V
Forward Current: 10 A
RoHS Device
Features
- Rated to 650V at 10 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
0.107(2.72)
0.094(2.40)
0.646(16.40)
Max.
0.620(15.75)
0.600(15.25)
0.409(10.40)
0.394(10.00)
0.116(2.95)
0.104(2.65)
0.311(7.90)
0.303(7.70)
0.152(3.85)
0.148(3.75)
TO-220-2
0.181(4.60)
0.173(4.40)
0.052(1.32)
0.048(1.23)
0.260(6.60)
0.244(6.20)
Circuit diagram
K(3)
0.067(1.70)
0.045(1.14)
0.155(3.93)
0.138(3.50)
0.551(14.00)
0.512(13.00)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.028(0.70)
0.019(0.49)
Dimensions in inches and (millimeter)
K(1)
A(2)
Maximum Rating
(at T =25°C unless otherwise noted)
A
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Conditions
Symbol
V
RRM
V
RSM
V
DC
Value
650
650
650
10
50
100
109
Unit
V
V
V
A
A
A
W
Tc = 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
I
F
I
FRM
I
FSM
P
TOT
T
C
= 25°C
T
C
= 110°C
Junction to case
R
θJC
T
J
T
STG
48
1.37
-55 ~ +175
-55 ~ +175
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC06
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Page 1
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Forward voltage
Conditions
I
F
= 10 A , T
J
= 25°C
Symbol
V
F
Typ
1.5
1.7
20
Max
1.7
Unit
V
I
F
= 10 A , T
J
= 175°C
V
R
= 650V , T
J
= 25°C
Reverse current
V
R
=
650V , T
J
= 175°C
V
R
= 400V , T
J
= 150°C
Total capacitive charge
Q
C
=
∫
VR
0
100
µA
I
R
30
C(V) dv
Q
C
36
nC
V
R
= 0V , T
J
= 25°C ,
f = 1 MH
Z
Total capacitance
V
R
= 200V , T
J
= 25°C ,
f = 1 MH
Z
C
710
pF
72
Typical Characteristics (
CDBJSC10650-G
)
Fig.1 - Forward Characteristics
10.0
9.0
T
J
=25°C
T
J
=75°C
T
J
=125°C
Fig.2 - Reverse Characteristics
0.088
0.080
Forward Current, I
F
(A)
8.0
7.0
6.0
Reverse
Current,
I
R
(mA)
0.072
0.064
0.056
0.048
0.040
0.032
0.024
0.016
0.008
0
T
J
=25°C
T
J
=75°C
T=175°C
J
T=125°C
J
T
J
=175°C
5.0
4.0
3.0
2.0
1.0
0
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
700
800
Forward Voltage, V
F
(V)
Reverse Voltage, V
R
(V)
Fig.3 - Current Derating
Capacitance Between Terminals, C
J
(pF)
120
110
100
Fig.4 - Capacitance vs. Reverse Voltage
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0.01
Forward Current, I
F
(A)
90
80
70
60
50
40
30
20
10
0
25
50
75
70% Duty
50% Duty
30% Duty
10% Duty
D.C.
100
125
150
175
0.1
1
10
100
1000
Case Tempature, T
C
(°C)
Reverse Voltage, V
R
(V)
REV:A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC06
Page 2
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Marking Code
Part Number
CDBJSC10650-G
Marking Code
JSC10650
C
JSC10650
Standard Packaging
TUBE PACK
Case Type
TUBE
( pcs )
BOX
( pcs )
TO-220-2
50
1,000
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC06
REV:A
Page 3
Comchip Technology CO., LTD.
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