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RURD660S9A-F085P

产品描述Rectifiers 6A, 600V Ultrafast Diodes
产品类别分立半导体    二极管   
文件大小837KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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RURD660S9A-F085P概述

Rectifiers 6A, 600V Ultrafast Diodes

RURD660S9A-F085P规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
包装说明R-PSSO-G2
制造商包装代码369AS
Reach Compliance Codecompliant
Factory Lead Time4 weeks
其他特性FREE WHEELING DIODE
应用ULTRA FAST SOFT RECOVERY POWER
配置SINGLE
二极管元件材料SILICON NITRIDE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.5 V
JEDEC-95代码TO-252AA
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流60 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流6 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
参考标准AEC-Q101
最大重复峰值反向电压600 V
最大反向电流100 µA
最大反向恢复时间0.083 µs
反向测试电压600 V
表面贴装YES
技术AVALANCHE
端子形式GULL WING
端子位置SINGLE

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RURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V
RURD660S9A-F085
Ultrafast Power Rectifier, 6A 600V
Features
• High Speed Switching ( t
rr
=63ns(Typ.) @ I
F
=6A )
• Low Forward Voltage( V
F
=1.26V(Typ.) @ I
F
=6A )
• Avalanche Energy Rated
• AEC-Q101 Qualified
6A, 600V Ultrafast Rectifier
The RURD660S9A-F085 is an ultrafast diode with soft
recovery characteristics (trr< 83ns). It has a low forward
voltage drop and is of silicon nitride passivated ion-
implanted epitaxial planar construction. This device is
intended for use as a freewheeling/clamping diode and
rectifier in a variety of switching power supplies and
other power switching applications. Its low stored charge
and ultrafast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing
powerloss in the switching transistors.
Applications
• General Purpose
• Switching Mode Power Supply
• Power switching circuits
Pin Assignments
1
2
D-PAK
TO-252
(TO-252)
2. Anode
T
C
= 25°C unless otherwise noted
1
1. Cathode
2
2. Anode
1. Cathode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
= 25°C unless otherwise noted
Ratings
600
600
600
@ T
C
= 25°C
6
60
- 55 to +175
Units
V
V
V
A
A
°C
Thermal Characteristics
T
Symbol
R
θJC
R
θJA
1
R
θJA
2
C
Parameter
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Maximum Thermal Resistance, Junction to Ambient
Max
3
140
50
Units
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
RUR660
Device
RURD660S9A-F085
Package
TO-252-2L
Tube
-
Quantity
60
Notes:
1. Mounted on a minimum pad follow by JEDEC standard.
2. Mounted on a 1 in2 pad of 2 oz copper follow by JEDEC standard.
©2013
Semiconductor Components Industries, LLC.
September-2017,
Rev.
3
1
Publication Order Number:
RURD660S9A-F085 /D

 
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