电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MUR115S R4G

产品描述Rectifiers 1A, 150V SMB Ultar fast GP
产品类别半导体    分立半导体   
文件大小448KB,共7页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

MUR115S R4G概述

Rectifiers 1A, 150V SMB Ultar fast GP

MUR115S R4G规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
DO-214AA-2
Vr - Reverse Voltage150 V
If - Forward Current1 A
类型
Type
Fast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage0.875 V
Max Surge Current40 A
Ir - Reverse Current2 uA
Recovery Time25 ns
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 175 C
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.388014 oz

文档预览

下载PDF文档
MUR105S - MUR160S
Taiwan Semiconductor
1A, 50V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
T
J MAX
Package
Configuration
VALUE
1
50 - 600
175
Single Die
UNIT
A
V
°C
DO-214AA (SMB)
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on
rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
MUR
MUR
105S
50
35
50
MUR
MUR
110S
100
70
100
MUR
MUR
115S
150
105
150
1
40
- 55 to +175
- 55 to +175
35
MUR
MUR
120S
200
140
200
MUR
MUR
140S
400
280
400
MUR
MUR
160S
600
420
600
V
V
V
A
A
°C
°C
105S 110S 115S 120S 140S 160S
UNIT
1
Version:K1701

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1509  925  2757  1753  89  31  19  56  36  2 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved