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SFF2007G C0

产品描述Rectifiers 20A, 500V, 35NS, GLASS PASSIVATED, SUPER FAST, DUAL RECTIFIER ISOLATED
产品类别半导体    分立半导体   
文件大小386KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 全文预览

SFF2007G C0概述

Rectifiers 20A, 500V, 35NS, GLASS PASSIVATED, SUPER FAST, DUAL RECTIFIER ISOLATED

SFF2007G C0规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-220-3
Vr - Reverse Voltage500 V
If - Forward Current20 A
类型
Type
Fast Recovery Rectifiers
ConfigurationDual Common Cathode
Vf - Forward Voltage1.7 V
Max Surge Current150 A
Ir - Reverse Current10 uA
Recovery Time35 ns
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Tube
高度
Height
8.6 mm
长度
Length
10.3 mm
产品
Product
Rectifiers
宽度
Width
4.7 mm
单位重量
Unit Weight
0.211644 oz

文档预览

下载PDF文档
SFF2001G - SFF2008G
Taiwan Semiconductor
CREAT BY ART
20A, 50V - 600V Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@ 10 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=125°C
SYMBOL 2001
G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
0.975
10
400
35
90
2.5
- 55 to +150
- 55 to +150
50
35
50
SFF
2002
G
100
70
100
SFF
2003
G
150
105
150
SFF
2004
G
200
140
200
20
150
1.3
1.7
SFF
2005
G
300
210
300
SFF
2006
G
400
280
400
SFF
2007
G
500
350
500
SFF
2008 UNIT
G
600
420
600
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: H1511

 
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