电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

WCR2512-51R1FI

产品描述Thick Film Resistors - SMD
产品类别无源元件   
文件大小553KB,共3页
制造商TT Electronics
下载文档 详细参数 全文预览

WCR2512-51R1FI概述

Thick Film Resistors - SMD

WCR2512-51R1FI规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
TT Electronics
产品种类
Product Category
Thick Film Resistors - SMD
技术
Technology
Thick Film
安装风格
Mounting Style
PCB Mount

文档预览

下载PDF文档
General Purpose Surface
Resistors
Mounted Resistors
General Purpose Surface
Mounted Resistors
General Purpose Surface
WCR Series
Mounted Resistors
Excellent reliability
WCR Series
Excellent reliability
WCR Series
Wrap around terminations
Wide range of sizes and ohmic values
Inner electrode protection
Excellent reliability
Wrap
range of sizes and ohmic values
Wide
around terminations
Inner electrode protection
Wrap around terminations
Inner electrode protection
AEC-Q200 grade available
Wide range of sizes and ohmic values
Welwyn Components
Welwyn Components
Electrical Data
Electrical
rating @ 70°C
Data
Power
0201
All parts are Pb-free and comply with EU Directive 2011/65/EU (RoHS2)
0402
0603
0805
1206
1210
2010
2512
0.1
0.125
0.25
0.5
1.0
0.05
0.25
0.063
watts
Resistance range
ohms 10R to 1M0 1R0 to 1M0
1R0 to 10M
0603
0805
1206
2010
2512
1210
0402
0201
150
25
50
75
Limiting element votage
volts
200
0.1
0.125
0.25
0.5
1.0
0.05
0.063
Power ratingTCR*
@ 70°C
watts
100 0.25
200
250
ppm/°C
Resistance range
ohms 10R to 1M0 1R0 to 1M0
1R0 to 10M
1
Resistance Tolerance
%
150
25
50
75
Limiting element votage
volts
200
E24 or E96
Standard values
100
200
250
TCR*
ppm/°C
-55 to 155
Ambient temperature range
°C
1
Resistance Tolerance Jumper Chip Rating %
Zero-ohm
amps
1.5
2
0.5
1
E24 or E96
Standard values
<50
Zero-ohm Jumper Chip Resistance milliohms
-55 to 155
Ambient temperature range
°C
* Notes – TCR for low values 1R to 10R: -400 to +600ppm/ºC, 11R to 100R: ±200ppm/ºC
Zero-ohm Jumper Chip Rating
amps
1.5
2
0.5
1
TCR for high values 3M3 to 10M: ±300ppm/º
<50
Zero-ohm Jumper Chip Resistance milliohms
Physical Data
Dimensions (mm)
Physical Data
L
Style
* Notes – TCR for low values 1R to 10R: -400 to +600ppm/ºC, 11R to 100R: ±200ppm/ºC
TCR for high values 3M3 to 10M: ±300ppm/º
The chips have a high alumina substrate (96% minimum) with
a ruthenium oxide resistance element and silver palladium,
Figure
Construction
and tin plated terminations. A glazed protection coat
1
nickel
The chips have a high alumina substrate (96% minimum) with
is applied to the resistive element (See Fig.1)
a ruthenium oxide resistance element and silver palladium,
Terminations
nickel and tin plated terminations. A glazed protection coat
Solderability
The terminations meet the requirements of
is applied to the resistive element (See Fig.1)
IEC 115-1, Clause 4.17.3.2.
Terminations
Strength
The terminations meet requirements of
Solderability
The terminations meet the requirements of
IEC 68.2.21.
IEC 115-1, Clause 4.17.3.2.
Strength
The terminations meet requirements of
IEC 68.2.21.
General Note
T
C
A
W
0.6 ± 0.03
0.23 ± 0.03
0.12 ± 0.05
0.15 ± 0.05
0.3 ± 0.03
0201
Dimensions (mm)
1.0 ± 0.1
0.35 ± 0.05
0.2 ± 0.1
0.25 ± 0.1
0.5 ± 0.05
0402
L
T
C
1.6 ± 0.15
0.5 ± 0.15
0.25 ±A
0.2
0.25 ± 0.2
W
Style
0.8 ± 0.15
0603
C
A
0.6 ± 0.03
0.23 ± 0.03
0.12 ± 0.05
0.15 ± 0.05
2.0 ± ± 0.03 1.25+ 0.2 -0.1 0.5 + 0.15 -0.10
0.4 ± 0.2
0.4 ± 0.2
0.3 0.2
0201
0805
1.0 ± 0.1
0.35 -0.15
0.2 ± -0.1
0.25 ± 0.1
L
3.2 +0.1±-0.25 1.6 + 0.1 ± 0.05 0.55 +0.150.1 0.5 + 0.2-0.25 0.5+ 0.2 -0.25
0.5 0.05
0402
1206
W
A T
1.6 ± 0.15 3.2 0.8 ± 0.15
0.50.15
± 0.15 0.550.25 ± 0.2
0.25 ± 0.2
+ 0.1 -0.2
+0.15 -0.1
0.5 ± 0.25
0.5 ± 0.2
0603
2.6 ±
1210
A
Wrap-around terminations
2.0 ± 0.2
0.4 0.15
0.4 ± 0.2
5.0 ± 0.15 -0.1 0.5 + 0.15 -0.10 0.56 ± ± 0.2
0.60 ± 0.25
0.60 ± 0.25
1.25+ 0.2
0805
2.5 ± 0.15
2010
(3 faces)
L
3.2 +0.1 -0.25 1.6 + 0.1 -0.15 0.55 +0.15 -0.1 0.56+ 0.2-0.25 0.60 ±0.2 -0.25 1.2 ± 0.85
0.5 ± 0.15
0.5+ 0.25
6.3 ± 0.15
1206
3.2 ± 0.15
W
2512
A
3.2 + 0.1 -0.2
0.55 +0.15 -0.1
0.5 ± 0.25
0.5 ± 0.2
2.6 ± 0.15
1210
Wrap-around terminations
5.0 ± 0.15
0.56 ± 0.15
0.60 ± 0.25
0.60 ± 0.25
2.5 ± 0.15
2010
Figure 1
(3 faces)
Construction
± 0.15
6.3 ± 0.15
0.56 ± 0.15
0.60 ± 0.25
1.2 ± 0.85
3.2
2512
C
T
Tin Plating
Epoxy Melamine
Protection
Nickel Barrier
Glass Dielectric
Silver
Dipped Conductor
Resistance Element
Palladium
Epoxy Melamine
Protection
Glass Dielectric
Silver
Resistance Element
Palladium
96% min Alumina Substrate
96% min Alumina Substrate
Tin Plating
Nickel Barrier
Dipped Conductor
Welwyn Components reserves the right to make changes in product specification without notice or liability.
All information is subject to Welwyn’s own data and is considered accurate at time of going to print.
General
Note
© Welwyn Components Limited
· Bedlington, Northumberland NE22 7AA, UK
General
Note
Welwyn Components
the right to make changes in
changes
specification
specification without notice or liability.
Telephone: +44 (0) 1670 make
product
in product
without notice or
Email:
TT Electronics reserves
reserves the right to 822181 · Facsimile: +44 (0) 1670 829465 ·
liability.
info@welwyn-tt.com · Website: www.welwyn-tt.com
All information is subject to Welwyn’s own data and is considered accurate at time of going to print.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
BI Technologies IRC Welwyn
Iss 07.03
A subsidiary of
TT electronics plc
www.ttelectronics.com/resistors
Iss 07.03
05.18
A subsidiary of
TT electronics plc
© Welwyn Components Limited
· Bedlington, Northumberland NE22 7AA, UK
© TT Electronics plc
Telephone: +44 (0) 1670 822181 · Facsimile: +44 (0) 1670 829465 · Email: info@welwyn-tt.com · Website: www.welwyn-tt.com
pda上gps数据获取程序
那位高手有pda上gps数据获取程序(从串口读取)? ...
pansy413 嵌入式系统
硬派越野车四驱系统详解(二)
基于分时四驱的这个问题,工程师开发出不用进行两驱四驱切换的四驱系统,这就是全时四驱。它解决的根本就是在前后转动轴之间加装了中央差速器。开放式差速器最主要的作用就是能够消除车轮之间的 ......
1ying 汽车电子
用AT89C51做的公交车自动报站系统软件部分
公交车自动报站系统是我的论文,主要是以硬件为主,但软件编程也要写一些,由于我们学校当年单片机是选修,我没学过,而且论文课题又是学校定的,所以我现在在编程这儿卡住了,急死了,我的论文基本已经 ......
小心触电 51单片机
几篇好文献
几篇很不错的文献撒...
qiqibaby 嵌入式系统
从网上搜集的DIY的CPU
转...
幸福的娃 单片机
本人初学模拟电路,请教关于PN结原理请教两个问题
PN结是由于电子扩散运动,在P型和N型半导体的交汇处形成PN结,产生内电场,方向有N指向P。那么我不明白为何内电场的加强会加强少子的漂移运动?以及为何漂移运动的加强又反而削弱了内电场呢? ......
Mensa 模拟电子

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1712  327  1869  552  1785  50  10  55  25  48 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved