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CD216A

产品描述1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA
产品类别半导体    分立半导体   
文件大小467KB,共8页
制造商Bourns
官网地址http://www.bourns.com
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CD216A概述

1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA

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PL
IA
N
Features
n
RoHS compliant*
n
Low profile
n
Surface mount
n
Very low forward voltage drop
*R
oH
S
This series is currently available, but
not recommended for new designs.
The
Model CD123D-B Series
is the
recommended replacement.
C
OM
T
LE
AD
F
RE
E
CD216A-B120L~B140 MITE Chip Diode
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Forward Voltage (Max.) (lf = 1 A)
Typical Junction Capacitance**
Reverse Current (Max.) (@ Rated VR)
Symbol
V
F
C
T
I
R
B120L
0.45
90
400
CD216-
B120R
B130L
0.53
0.38
75
70
10
410
B140
0.55
60
500
Unit
V
pF
µA
**Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Symbol
V
RRM
V
DC
V
RMS
I
O
I
FSM
V
F
B120L
20
20
14
B120R
20
20
14
CD216-
B130L
30
30
21
B140
40
40
28
Unit
V
V
RMS Voltage
Average Forward Current @ TL = 130 °C
Peak Forward Surge Current***
Max. Instantaneous Forward Voltage****
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
Storage Temperature
Junction Temperature
50
0.34
0.45
0.65
50
0.455
0.53
0.595
1
50
0.30
0.38
0.52
40
0.36
0.55
0.85
0.50
0.15
V
A
A
V
I
R
0.4
0.1
0.0100
0.0010
0.0005
35
20
250
0.41
0.13
0.05
mA
RƟJL
RƟJTAB
RƟJA
T
STG
TJ
°C/W
°C
°C
-55 to +150
-55 to +125
***Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
****Pulse Test; Pulse Width = 300 µS, Duty Cycle = 2 %.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.

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