*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.
Applications
n
Cellular phones
n
PDAs
n
Desktop PCs and notebooks
n
Digital cameras
n
MP3 players
CD216A-B120L~B140 MITE Chip Diode
Product Dimensions
H
H
Recommended Pad Layout
A
A
A
TAB
1
A
TAB
1
B
B
C
C
K
K
B
B
J
J
D
D
E
E
Dimension
C
C
DO-216AA
2.67
(0.105)
2.54
(0.100)
1.27
(0.050)
0.625
(0.025)
0.762
(0.030)
A
B
F
G
F
G
G
I
I
G
C
D
E
E
D
D
E
Physical Specifications
Case ............................................. JEDEC 20-216AA Molded plastic
Polarity...............................................Cathode designated by TAB 1
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
30 = 30 V
40 = 40 V
Forward Voltage Suffix
L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L)
R = Low Leakage Current IR (CD216-B120R)
Terminations
LF = 100 % Sn (RoHS Compliant)
MM
DIMENSIONS:
(INCHES)
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.
CD216A-B120L~B140 MITE Chip Diode
Rating & Characteristic Curves: CD216A-B120L
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
10
125 °C
100 °C
Forward Current (Amps)
Reverse Current (µA)
1
Reverse Characteristics
100
1
0.1
0.01
25 °C
0.1
125 °C
0.0
100 °C
0.2
25 °C
0.4
Forward Voltage (Volts)
0.6
0.8
0.001
0
5
10
15
20
25
Reverse Voltage (Volts)
Derating Curve
1.25
Capacitance Between Terminals
200
180
1.00
Average Forward Current (Amps)
160
140
0.75
Capacitance (pF)
120
100
80
60
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
40
20
0
F = 1 MHz
Ta = 25 ϒ
C
0.50
0.25
25
50
75
100
125
150
Lead Temperature (ϒ
C)
0
10
20
Reverse Voltage (Volts)
30
40
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.
CD216A-B120L~B140 MITE Chip Diode
Rating & Characteristic Curves: CD216A-B120R
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
100
100 °C
Reverse Current (µA)
Reverse Characteristics
1000
125 °C
Forward Current (Amps)
10
1
1
0.1
25 °C
0.1
125 °C
0.2
100 °C
25 °C
0.4
Forward Voltage (Volts)
0.6
0.8
0.01
0
5
10
15
20
25
Reverse Voltage (Volts)
Derating Curve
1.25
Capacitance Between Terminals
150
1.00
Average Forward Current (Amps)
125
F = 1 MHz
Ta = 25 ϒ
C
0.75
Capacitance (pF)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
25
50
75
100
125
150
100
75
0.50
50
0.25
25
0
Lead Temperature (ϒ
C)
0
10
20
Reverse Voltage (Volts)
30
40
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.
CD216A-B120L~B140 MITE Chip Diode
Rating & Characteristic Curves: CD216A-B130L
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
10
125 °C
100 °C
Reverse Current (µA)
Forward Current (Amps)
1
Reverse Characteristics
100
1
0.1
0.01
25 °C
100 °C
0.1
125 °C
0
0.2
25 °C
0.4
0.6
0.8
1
0.001
0
5
10
15
20
25
30
35
Reverse Voltage (Volts)
Forward Voltage (Volts)
Derating Curve
1.25
Capacitance Between Terminals
150
1.00
Average Forward Current (Amps)
125
F = 1 MHz
Ta = 25 ϒ
C
0.75
Capacitance (pF)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
25
50
75
100
125
150
100
75
0.50
50
0.25
25
Lead Temperature (ϒ
C)
0
0
10
20
Reverse Voltage (Volts)
30
40
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.
卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
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