• 1N4565A THRU 1N4584A AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/452
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• 6.4 VOLT ZENER VOLTAGE + 5%
• ELECTRICALLY EQUIVALENT TO 1N4565 THRU 1N4584A
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER RELOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
CD4565
thru
CD4584A
REVERSE LEAKAGE CURRENT
l
R
= 2
µ
A @ 25°C & V
R
= 3 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
ZENER
TEST
CURRENT
l ZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
VOLTAGE
TEMPERATURE
STABILITY
³VZT MAX
-55° to + 100°
(Note 2)
mV
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
TEMPERATURE
RANGE
MAXIMUM
ZENER
IMPEDANCE
ZZT
(Note 1)
°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
25
25
25
25
25
TYPE
NUMBER
6.4V + 5%
mA
CD4565
CD4565A
CD4566
CD4566A
CD4567
CD4567A
CD4568
CD4568A
CD4569
CD4569A
CD4570
CD4570A
CD4571
CD4571A
CD4572
CD4572A
CD4573
CD4573A
CD4574
CD4574A
CD4575
CD4575A
CD4576
CD4576A
CD4577
CD4577A
CD4578
CD4578A
CD4579
CD4579A
CD4580
CD4580A
CD4581
CD4581A
CD4582
CD4582A
CD4583
CD4583A
CD4584
CD4584A
.5
.5
.5
.5
.5
.5
.5
.5
.5
.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
%/°C
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
Backside is not cathode and
must be electrically isolated.
T = Metallization Test Pad
DESIGN DATA
METALLIZATION:
Top: C (Cathode) ..................Al
A (Anode) ..................... Al
Back: .......................................Au
AL THICKNESS.........25,000
Å
Min
GOLD THICKNESS......4,000
Å
Min
CHIP THICKNESS.
..............10 Mils
CIRCUIT LAYOUT DATA:
Backside must be electrically
isolated.
Backside is not cathode.
For Zener operation cathode must
be operated positive with respect
to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
.
NOTE 1
Zener impedance is derived by superimposing on l ZT A 60Hz rms a.c. current
equal to 10% of l ZT.
NOTE 2
The maximum allowable change observed over the entire temperature range
i.e.,the diode voltage will not exceed the speci½ed mV at any discrete
temperature between the established limits, per JEDEC standard No.5.
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
193
22 MILS
CD4565
+.0015
+.0010
+.0005
0
-.0005
CHANGE IN TEMPERATURE COEFFICIENT ( %/°C)
-.0010
-.0015
thru
CD4584A
CD4570-CD4574
CD4565-CD4569
.1
.2
.3
.4
.5
.6
.7
.8
OPERATING CURRENT lZT (mA)
.9
.25
.5
1.0
1.5
2.0
OPERATING CURRENT lZT (mA)
+.0010
+.0005
0
-.0005
-.0010
CD4575-CD4579
CD4580-CD4584
0.5
1.0
1.5 2.0 2.5 3.0
3.5 4.0
OPERATING CURRENT lZT (mA)
4.5
2.0
2.5 3.0
3.5 4.0
4.5 5.0
5.5
OPERATING CURRENT lZT (mA)
10000
6.0
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT
10000
5000
CD4565-CD4574
5000
CD4575-CD4584
ZENER IMPEDANCE ZZT (OHMS)
1000
500
ZENER IMPEDANCE ZZT (OHMS)
1000
500
100
50
100
50
10
.25 .5
1.0
1.5 2.0
2.5 3.0 3.5
OPERATING CURRENT I
ZT
(mA)
10
1.0 2.0
3.0 4.0 5.0 6.0
OPERATING CURRENT I
ZT
(mA)
ZENER IMPEDANCE VS. OPERATING CURRENT
194
意法半导体-低功耗射频
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
