• MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• 8.5 & 9.1 VOLT NOMINAL ZENER VOLTAGE +5%
• ELECTRICALLY EQUIVALENT TO 1N4765 THRU 1N4772A AND
1N4775 THRU 1N4782A SERIES
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD4765 thru CD4767A
and
CD4770 thru CD4772A
and
CD4775 thru CD4777A
and
CD4780 thru CD4782A
38
23
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
38
TYPE
NUMBER
ZENER
VOLTAGE
vz @ I
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
MAXIMUM
VOLTAGE
ZENER
TEMPERATURE
IMPEDANCE
STABILITY
ZZT
³V
ZT
MAXIMUM
(Note 1)
mA
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
OHMS
350
350
350
350
350
350
200
200
200
200
200
200
350
350
350
350
350
350
200
200
200
200
200
200
(Note 2)
mV
68
141
34
70
14
28
68
141
34
70
14
28
64
132
32
66
13
26
64
132
32
66
13
26
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
°C
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
% / °C
0.01
0.01
0.005
0.005
0.002
0.002
0.01
0.01
0.005
0.005
0.002
0.002
0.01
0.01
0.005
0.005
0.002
0.002
0.01
0.01
0.005
0.005
0.002
0.002
TEMPERATURE
EFFECTIVE
RANGE
TEMPERATURE
COEFFICIENT
23
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
FIGURE 1
(Note 3)
VOLTS
CD4765
CD4765A
CD4766
CD4766A
CD4767
CD4767A
CD4770
CD4770A
CD4771
CD4771A
CD4772
CD4772A
CD4775
CD4775A
CD4776
CD4776A
CD4777
CD4777A
CD4780
CD4780A
CD4781
CD4781A
CD4782
CD4782A
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
DESIGN DATA
METALLIZATION:
Top: C (Cathode)...................Al
A (Anode)............. .........Al
Back: ......................................Au
AL THICKNESS............25,000
Å
Min
GOLD THICKNESS...
.....4,000
Å
Min
CHIP THICKNESS.............
.....10 Mils
CIRCUIT LAYOUT DATA:
Backside must be electrically
isolated.
Backside is not cathode.
For Zener operation cathode
must be operated positive
with respect to anode.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current
equal to 10% of lZT.
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the speci½ed mV at any discrete temperature
between the established limits, per JEDEC standard No.5.
Zener voltage range is +5%
TOLERANCES:
ALL
Dimensions + 2 mils
NOTE 2
NOTE 3
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
201
CD4765
thru
CD4767A
thru
CD4770
thru
CD4772A
and
CD4775
thru
CD4777A
and
CD4780
thru
CD4782A
1000
500
ZENER IMPEDANCE Z
(OHMS)
ZT
100
50
10
1
2
3
OPERATING CURRENT lZT (mA)
FIGURE 2
ZENER IMPEDANCE
VS.
OPERATING CURRENT
+.0015
CHANGE IN TEMPERATURE COEFFICIENT ( %/°C)
+.0010
+.0005
0
-.0005
-.0010
-.0015
0.5
1.0
1.5
OPERATING CURRENT lZT (mA)
2.0
FIGURE 3
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT
202
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