FOD819 Series
FOD819 4-Pin DIP High
Speed Phototransistor
Optocouplers
Description
The FOD819 consists of a gallium arsenide (GaAs) infra− red
emitting diode, driving a high speed photo detector with integrated
base−to−emitter resistor, R
BE
, in a 4−pin dual−in−line package. It is
designed to be an improved replacement to the popular FOD817
Series when higher speed performance is required in isolated data
signal transmission.
Features
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High Speed Performance ~ 30 kHz
Current Transfer Ratio: 100% to 600%
Minimum BV
CEO
of 80 V Guaranteed
Safety and Regulatory Approvals:
UL1577, 5,000 VAC
RMS
for 1 Minute
DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
DIP 4 PINS
MARKING DIAGRAM
Typical Applications
Digital Logic Inputs
Microprocessor Inputs
Power Supply Monitor
Twisted Pair Line Receiver
Telephone Line Receiver
1.
2.
3.
4
5.
6.
ON
819
V
X
ZZ
Y
ON
= Company Logo
= Device Number
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Digit Work Week
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
July, 2018 − Rev. 2
Publication Order Number:
FOD819/D
FOD819 Series
Safety and Insulation Ratings
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Table 1. SAFETY AND INSULATION RATINGS
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–III
55/115/21
2
175
Table 2.
Symbol
V
PR
Parameter
Input−to−Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input−to−Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
V
IORM
V
IOTM
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
External Clearance
External Clearance (for Option W, 0.4” Lead Spacing)
DTI
T
S
I
S,INPUT
P
S,OUTPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
Output Power (Note 1)
Insulation Resistance at T
S
, V
IO
= 500 V (Note 1)
Value
1360
1594
850
8000
≥
7
≥
7
≥
10
≥
0.4
175
400
700
> 10
11
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
mm
°C
mA
mW
Ω
1. Safety limit values – maximum values allowed in the event of a failure.
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
TOTAL PACKAGE
T
STG
T
OPR
T
J
T
SOL
θ
JC
P
TOT
EMITTER
I
F
V
R
P
D
Continuous Forward Current
Reverse Voltage
Power Dissipation
Derate Above 100°C
50
6
70
1.7
mA
V
mW
mW/°C
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Junction−to−Case Thermal Resistance
Total Device Power Dissipation
−55 to +125
−55 to +110
−55 to +125
260 for 10 seconds
210
200
°C
°C
°C
°C
°C/W
mW
Parameter
Value
Unit
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FOD819 Series
Table 3. ABSOLUTE MAXIMUM RATINGS
(continued)
Symbol
DETECTOR
V
CEO
V
ECO
I
C
P
C
Collector−Emitter Voltage
Emitter−Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate Above 90°C
80
2
30
150
2.9
V
V
mA
mW
mW/°C
Parameter
Value
Unit
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics
Table 4. INDIVIDUAL COMPONENT CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Symbol
EMITTER
V
F
I
R
C
t
Forward Voltage
Reverse Current
Terminal Capacitance
I
F
= 1.5 mA
V
R
= 4.0 V
V = 0, f = 1 kHz
30
1.2
1.4
10
V
μA
pF
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DETECTOR
I
CEO
BV
CEO
BV
ECO
Collector Dark Current
Collector−Emitter Breakdown Voltage
Emitter−Collector Breakdown Voltage
V
CE
= 40 V, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
E
= 0.1 mA, I
F
= 0
80
2
150
7
100
nA
V
V
DC TRANSFER CHARACTERISTICS
CTR
V
CE(SAT)
I
C(OFF)
Current Transfer Ratio (Note 2)
Saturation Voltage
OFF−state collector current
I
F
= 1.5 mA, V
CE
= 5 V
I
F
= 1.5 mA, I
C
= 0.2 mA
V
F
= 0.7 V, V
CE
= 40 V
100
600
0.3
10
%
V
μA
AC TRANSFER CHARACTERISTICS
t
R
t
F
t
PHL
t
PLH
Rise Time (Saturated)
Fall Time (Saturated)
Propagation Delay Time High−to−Low
Propagation Delay Time Low−to−High
I
F
= 1.5 mA, V
CC
= 5 V, R
L
= 10 k
Ω
(
Note 3)
I
F
= 1.5 mA, V
CC
= 5 V, R
L
= 10 k
Ω
(
Note 3)
12
20
9
18
30
30
μs
μs
μs
μs
2. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
3. Refer to test circuit setup.
Table 5. ISOLATION CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Symbol
V
ISO
R
ISO
C
ISO
Parameter
Input−Output Isolation Voltage (Note 4)
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 minutes,
I
I−O
≤
2
μA
V
I−O
= 500 V
DC
V
I−O
= 0, f = 1 MHz
Min.
5000
1 x 10
11
0.6
1.0
Typ.
Max.
Unit
VAC
RMS
Ω
pf
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
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FOD819 Series
Typical Performance Curves
100
P
C
− COLLECTOR POWER DISSIPATION (mW)
P
LED
− LED POWER DISSIPATION (mW)
200
80
150
60
100
40
50
20
0
−40
−20
0
20
40
60
80
100
120
0
−40
−20
0
20
40
60
80
100
120
T
A
- AMBIENT TEMPERATURE (°C)
T
A
- AMBIENT TEMPERATURE (°C)
Figure 1.
LED Power Dissipation
vs. Ambient Temperature
100
Figure 2.
Collector Power Dissipation
vs. Ambient Temperature
V
CE
− COLLECTOR−EMITTER VOLTAGE (V)
6
5
4
3
2
1
0
0.0
I
C
= 0.5 mA
1 mA
3 mA
5 mA
7 mA
T
A
= 25
°C
I
F
− FORWARD CURRENT (mA)
T
A
= 110
°C
75
°C
10
50
°C
25
°C
0
°C
1
-30
°C
-40
°C
-55
°C
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.5
5.0
7.5
10.0
12.5
15.0
V
F
− FORWARD VOLTAGE (V)
I
F
− FORWARD CURRENT (mA)
Figure 3.
Forward Current vs. Forward Voltage
RELATIVE CURRENT TRANSFER RATIO (%)
Figure 4.
Collector-Emitter Voltage
vs. Forward Current
180
160
140
120
100
80
60
40
20
0
−40
−20
0
20
40
60
80
100
120
V
CE
= 5 V
I
F
= 1.5 mA
CTR − CURRENT TRANSFER RATION (%)
500
V
CE
= 5 V
T
A
= 25
°C
400
300
200
100
0
1
10
100
I
F
− FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (°C)
Figure 5.
Current Transfer Ratio
vs. Forward Current
Figure 6.
Relative Current Transfer Ratio
vs. Ambient Temperature
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FOD819 Series
40
0.30
P
C
(MAX)
T
A
= 25
°C
I
C
− COLLECTOR CURRENT (mA)
V
CE(SAT)
− COLLECTOR−EMITTER
30
I
F
= 30 mA
20 mA
10 mA
5 mA
SATURATION VOLTAGE (V)
0.25
0.20
I
F
= 8 mA, I
C
= 2.4 mA
0.15
I
F
= 1.5 mA, I
C
= 0.2 mA
0.10
0.05
0.00
−40
20
10
1.5 mA
0
0
2
4
6
8
10
−20
0
20
40
60
80
100
120
V
CE
− COLLECTOR−EMITTER VOLTAGE (V)
T
A
- AMBIENT TEMPERATURE (°C)
Figure 7.
Collector Current
vs. Collector-Emitter Voltage
Figure 8.
Collector-Emitter Saturation Voltage
vs. Ambient Temperature
I
CEO
− COLLECTOR DARK CURRENT (nA)
100
V
CE
= 40 V
10
100
t
P
- PROPAGATION DELAY TIME (μs)
V
CC
= 5 V
I
F
= 1.5 mA
R
L
= 10 kΩ
Frequency = 1 kHz
t
PHL
1
10
0.1
0.01
t
PLH
0.001
−40
−20
0
20
40
60
80
100
120
1
−40
−20
0
20
40
60
80
100
120
T
A
- AMBIENT TEMPERATURE (°C)
T
A
- AMBIENT TEMPERATURE (°C)
Figure 9.
Collector Dark Current
vs. Ambient Temperature
Figure 10.
Propagation Delay
vs. Ambient Temperature
t
R
/ t
F
- SATURATED RISE/FALL TIME (μs)
1000
t
P
- PROPAGATION DELAY TIME (μs)
V
CC
= 5 V
I
F
= 1.5 mA
R
L
= 10 kΩ
Frequency = 1 kHz
100
V
CC
= 5 V
I
F
= 2 mA
R
L
= 10 kΩ
Frequency = 10 kHz
t
PLH
100
t
R
10
t
PHL
10
t
F
1
−40
−20
0
20
40
60
80
100
120
1
−40
−20
0
20
40
60
80
100
120
T
A
- AMBIENT TEMPERATURE (°C)
T
A
- AMBIENT TEMPERATURE (°C)
Figure 11.
Saturated Rise / Fall Time
vs. Ambient Temperature
Figure 12.
Propagation Delay
vs. Ambient Temperature
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