Ordering number : ENN7922
FW341
N-Channel and P-Channel Silicon MOSFETs
FW341
Features
•
•
•
General-Purpose Switching Device
Applications
•
•
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Best suited for motor drive application.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(2000mm
2
!0.8mm)1unit
Mounted on a ceramic board
(2000mm
2
!0.8mm)
Conditions
N-channel
30
±20
3.5
4
6
14
1.4
1.7
150
--55 to +150
P-channel
--30
±20
--2.5
--3
--4.5
--10
Unit
V
V
A
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
ID=1.8A, VGS=4V
1.2
3.0
5.3
64
105
84
150
30
1
±10
2.6
V
µA
µA
V
S
mΩ
mΩ
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : W341
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-100623 No.7922-1/6
FW341
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-
-1mA, VGS=0
VDS=-
-30V, VGS=0
VGS=±16V, VDS=0
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-2.5A
ID=-
-2.5A, VGS=-
-10V
ID=-
-1A, VGS=-
-4V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=-
-10V, VGS=--10V, ID=-
-2.5A
VDS=-
-10V, VGS=--10V, ID=-
-2.5A
VDS=-
-10V, VGS=--10V, ID=-
-2.5A
IS=--2.5A, VGS=0
--30
--1
±10
--1.2
2
3
110
240
200
47
32
7
3.5
20
8
5.5
0.98
0.82
-
-0.87
--1.5
145
340
--2.6
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0
Ratings
min
typ
180
42
25
7
15
19
5
5.0
0.9
0.6
0.88
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2129
8
5
0.3
Electrical Connection
8
7
6
5
1.8max
1
5.0
4
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
4.4
6.0
Top view
0.595
1.27
0.43
0.1
1.5
No.7922-2/6
FW341
Switching Time Test Circuit
[N-channel]
VIN
10V
0V
VIN
ID=3.5A
RL=4.3Ω
VDD=15V
0V
--10V
VIN
ID= --2.5A
RL=6Ω
[P-channel]
VIN
VDD= --15V
D
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
D
VOUT
G
G
FW341
P.G
50Ω
FW341
P.G
50Ω
S
S
7
ID -- VDS
4V
5V
[Nch]
3.5
ID -- VGS
°
C
Ta=--2
5
[Nch]
6
3.0
8V
6V
Drain Current, ID -- A
5
Drain Current, ID -- A
2.5
10V
4
V GS=3V
2.0
3
1.5
2
1.0
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.5
0
0
0.5
1.0
1.5
Ta=7
5
°
C
--25
°
C
25
°
C
2.0
2.5
75
°
C
25
°
C
3.0
VDS=10V
3.5
4.0
Drain-to-Source Voltage, VDS -- V
300
IT06650
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
200
IT06651
[Nch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
150
200
150
100
1.
I D=
8
=4V
V GS
A,
100
ID=1.8A
3.5A
=10V
VGS
.5A,
I D=3
50
50
0
2
3
4
5
6
7
8
9
10
IT06652
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
IT06653
No.7922-3/6
FW341
10
y
fs -- ID
[Nch]
VDS=10V
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
IF -- VSD
[Nch]
VGS=0
1.0
7
5
3
2
=
Ta
5
--2
°
C
75
°
C
Forward Current, IF -- A
°
C
25
Ta=7
5
°
C
25
°
C
0.3
0.4
0.5
0.6
0.1
7
5
3
2
0.1
0.01
2
3
5 7
0.1
2
3
5 7
1.0
2
3
Drain Current, ID -- A
100
7
10
IT06654
5 7
0.01
0.2
0.7
--25
°
C
0.8
0.9
1.0
1.1
1.2
SW Time -- ID
[Nch]
VDD=15V
VGS=10V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
IT06655
[Nch]
f=1MHz
Switching Time, SW Time -- ns
5
3
2
td(off)
Ciss
10
7
5
3
2
1.0
0.1
td(on)
100
7
5
3
2
tf
tr
Coss
Crss
10
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10
9
10
IT06656
7
0
5
10
15
20
25
30
IT06657
Drain-to-Source Voltage, VDS -- V
3
2
10
7
5
VGS -- Qg
VDS=10V
ID=3.5A
[Nch]
ASO
IDP=14A
ID=3.5A
[Nch]
<10µs
Gate-to-Source Voltage, VGS -- V
10
1m
s
8
0
µ
s
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
IT06658
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
DC
0m
s
10
ms
10
Operation in this
area is limited by RDS(on).
op
era
tio
n
s
0.01
0.1
Ta=25
°
C
Single pulse
Mounted on a ceramic board (2000mm
2
!
0.8mm)1unit
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Total Gate Charge, Qg -- nC
V
--6.0
V
--4.
0V
--2.0
ID -- VDS
--10.
0
Drain-to-Source Voltage, VDS -- V
--5.0
IT06659
[Pch]
ID -- VGS
[Pch]
VDS=10V
--4.5
--4.0
--1.6
Drain Current, ID -- A
.
--3
--1.2
5V
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--0.8
VGS= --3.0V
--0.4
--1.0
--0.5
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
5
°
C
25
--25
°
C
°
C
--3.0
--3.5
--1.5
Ta=
7
--4.0
--4.5
Drain-to-Source Voltage, VDS -- V
IT03212
Gate-to-Source Voltage, VGS -- V
IT03213
No.7922-4/6
FW341
500
RDS(on) -- VGS
[Pch]]
Ta=25
°
C
400
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
450
400
350
300
250
200
150
100
50
--2
350
300
250
200
150
100
50
0
--60
--1
I D=
.0A
= --4
, VGS
V
--2.5A
ID= --1.0A
= --10V
.5A, V GS
I D= --2
--3
--4
--5
--6
--7
--8
--9
--10
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
y
fs -- ID
IT07523
Ambient Temperature, Ta --
°C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IT07524
[Pch]
VDS= --10V
IF -- VSD
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
[Pch]
VGS=0
°
C
25
1.0
7
5
3
2
5
°
C
--2
°
C
=
75
Ta
Forward Current, IF -- A
°
C
Ta=7
5
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
100
5 7 --10
IT03216
--0.01
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--25
°
C
--0.8
--0.9
25
°
C
--1.0
--1.1
--1.2
SW Time -- ID
[Pch]
3
2
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
IT03217
[Pch]
f=1MHz
VDD=
--15V
VGS=
--10V
Switching Time, SW Time -- ns
7
Ciss, Coss, Crss -- pF
5
3
2
10
7
5
3
2
1.0
--0.1
100
7
5
td(off)
td(on)
tf
Coss
3
2
Crss
tr
10
2
3
5
7
--1.0
2
3
5
IT03218
0
--5
--10
--15
--20
--25
--30
IT03219
Drain Current, ID -- A
--10
--9
Drain-to-Source Voltage, VDS -- V
2
--10
7
5
VGS -- Qg
[Pch]
ASO
IDP= --10A
ID= --2.5A
[Pch]
<10µs
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --2.5A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
IT03220
10
10
10
m
0m
s
DC
s
op
er
ati
on
10s
Drain Current, ID -- A
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
1m
s
0
µ
s
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm
2
!0.8mm)
1unit
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
5
--0.01
--0.01 2 3
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
IT07525
No.7922-5/6
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