CMT20N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
!
!
!
FEATURES
!
!
!
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
PIN CONFIGURATION
TO-3P
Top View
SYMBOL
D
G ATE
SO URCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 20A, L = 1.38mH, R
G
= 25Ω)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
θ
JC
θ
JA
T
L
0.50
40
260
℃
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
20
60
±20
±40
250
2.00
-55 to 150
276
V
V
W
W/℃
℃
mJ
Unit
A
2002/07/24
Preliminary
Champion Microelectronic Corporation
Page 1
CMT20N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ORDERING INFORMATION
Part Number
CMT20N50N3P
Package
TO-3P
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT20N50
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 500 V, V
GS
= 0 V)
(V
DS
= 500 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 10A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 20 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 10A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 250 V, I
D
= 20 A,
V
GS
= 10 V,
R
G
= 9.1Ω) *
(V
DS
= 400 V, I
D
= 20 A,
V
GS
= 10 V)*
Symbol
V
(BR)DSS
I
DSS
0.05
0.1
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
11
3880
452
96
29
90
97
84
100
20
44
5.0
13
6950
920
140
55
165
190
170
132
5.75
2.0
100
100
4.0
0.25
6.0
nA
nA
V
Ω
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Min
500
Typ
Max
Units
V
mA
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 20 A,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
**
431
1.5
V
ns
ns
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2002/07/24
Preliminary
Champion Microelectronic Corporation
Page 2
CMT20N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2002/07/24
Preliminary
Champion Microelectronic Corporation
Page 3
CMT20N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
PACKAGE DIMENSION
TO-3P
θ
2
A
A1
A2
A3
b
θ
3
b1
C
θ
1
C1
D
D1
D2
D3
D4
e
f1
f2
L1
L2
L3
θ
1
θ
3
θ
3
θ
2
θ
3
θ
3
θ
3
2002/07/24
Preliminary
Champion Microelectronic Corporation
Page 4
CMT20N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage.
CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
Use of CMC products in such applications is
In order to minimize risks associated with the customer’s applications, the
use in life-support applications, devices or systems or other critical applications.
understood to be fully at the risk of the customer.
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
2002/07/24
Preliminary
Champion Microelectronic Corporation
Page 5
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