d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
g. T
C
= 25 °C
S15-1523-Rev. A, 29-Jun-15
Document Number: 65689
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR696DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
V
DD
= 75 V, R
L
= 3.75
Ω
I
D
≅
20 A, V
GEN
= 7.5 V, R
g
= 1
Ω
V
DD
= 75 V, R
L
= 3.75
Ω
I
D
≅
20 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DS
= 75 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 75 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 75 V, V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 75 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 125 V, V
GS
= 0 V
V
DS
= 125 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
MIN.
125
-
-
2.5
-
-
-
50
-
-
-
-
-
-
-
-
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
96
-8.1
-
-
-
-
-
0.0096
0.0112
37
1410
335
13
24.8
19.4
7.8
7.6
75
1.9
10
17
18
7
12
19
17
8
-
-
0.77
69
141
39
30
MAX.
-
-
-
4.5
± 100
1
10
-
0.0115
0.0135
-
-
-
-
38
29
-
-
113
3.5
20
34
36
14
24
38
34
16
60
150
1.1
138
280
-
-
ns
Ω
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
Ω
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1523-Rev. A, 29-Jun-15
Document Number: 65689
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR696DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 7 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
80
100
Vishay Siliconix
60
V
GS
= 6 V
60
T
C
= 25
°C
40
40
T
C
= 125
°C
T
C
= - 55
°C
20
V
GS
= 5 V
V
GS
= 4 V
20
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.016
3500
0.014
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2800
0.012
V
GS
= 7.5 V
2100
C
iss
1400
C
oss
700
C
rss
0.010
V
GS
= 10 V
0.008
0.006
0
20
40
60
I
D
- Drain Current (A)
80
100
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
Capacitance
10
V
DS
= 75 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
2.1
I
D
= 20 A
1.8
V
GS
= 10 V
6
V
DS
= 50 V
V
DS
= 100 V
1.5
V
GS
= 7.5 V
1.2
4
2
0.9
0
0
5
10
15
20
Q
g
- Total
Gate
Charge (nC)
25
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-1523-Rev. A, 29-Jun-15
On-Resistance vs. Junction Temperature
Document Number: 65689
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR696DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
Vishay Siliconix
10
I
S
-
Source
Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.04
I
D
= 20 A
0.03
T
J
= 125
°C
0.02
0.1
0.01
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
5
6
7
8
9
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
200
0.5
V
GS(th)
- Variance (V)
160
I
D
= 5 mA
- 0.5
Power (W)
150
0.0
120
80
- 1.0
I
D
= 250 μA
40
- 1.5
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
1000
I
DM
Limited
100
Single Pulse Power, Junction-to-Ambient
100 us
I
D
- Drain Current (A)
I
D
Limited
10
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
1
s
10
s
BVDSS Limited
DC
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-1523-Rev. A, 29-Jun-15
Document Number: 65689
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR696DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
Vishay Siliconix
60
I
D
- Drain Current (A)
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
125
3.0
100
2.4
Power (W)
Power (W)
75
1.8
50
1.2
25
0.6
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1523-Rev. A, 29-Jun-15
Document Number: 65689
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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