PTVA082407NF
Thermally-Enhanced High Power RF LDMOS FET
240 W, 48 V, 746 – 821 MHz
Description
The PTVA082407NF is a 240-watt LDMOS FET manufactured with
Infineon's 48-V LDMOS process. It is designed for use in multi-stan-
dard cellular power amplifier applications. It features a single ended
design and input matching that allow for use from 746 MHz to 821
MHz. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA082407NF
Package PG-HBSOF-4-1
V
DD
= 48 V, I
DQ
= 900 mA, ƒ = 755 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24
60
40
Gain
Single-carrier WCDMA Drive-up
Features
•
•
Broadband internal input matching
Typical CW performance, 755 MHz, 48 V
- Output power at P
1dB
= 225 W
- Output power at P
3dB
= 250 W
- Gain = 20.5 dB
- Efficiency = 43%
Capable of handling 10:1 VSWR @ 48 V, 80 W CW
output power
Integrated ESD protection
Human Body Model class 2 (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
ptva082407nf_g1
20
Efficiency
Efficiency (%)
•
•
•
•
•
0
-20
-40
-60
PAR @ 0.01% CCDF
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon production test fixture)
V
DD
= 48 V, I
DQ
= 900 mA, P
OUT
= 80 W avg, ƒ = 755 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10
dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
21
33
—
Typ
22.5
35.5
–31.5
Max
—
—
–29.5
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.5, 2017-07-18
PTVA082407NF
Typical RF Performance
(data taken in production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Broadband
Performance
V
DD
= 48 V, I
DQ
= 900 mA, ƒ = 755 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-10
60
ACPU
ACPL
Efficiency
V
DD
= 48 V, I
DQ
= 900 mA, P
OUT
= 49.03 dBm,
3GPP WCDMA signal, PAR = 10 dB
22
Gain
50
45
ACP Up & Low (dBc)
-20
-30
-40
-50
-60
-70
50
21
Efficiency (%)
30
20
10
ptva082407nf_g2
19
18
17
16
Efficiency
35
30
25
ptva082407nf_g3
25
30
35
40
45
50
55
0
675
700
725
750
775
800
825
20
Average Output Power (dBm)
Frequency (MHz)
V
DD
= 48 V, I
DQ
= 900 mA, P
OUT
= 49.03 dBm,
3GPP WCDMA signal, PAR = 10 dB
-10
-5
-10
23
22
Single-carrier WCDMA Broadband
Performance
V
DD
= 48 V, I
DQ
= 900 mA
50
Gain
CW Performance
ACPL & ACP Up (dBc)
-15
-20
-25
-30
-35
ACPU
ACPL
IRL
40
30
Return Loss (dB)
-15
-20
-25
-30
Gain (dB)
21
20
19
18
745MHz
755MHz
750MHz
Efficiency
20
10
0
ptra093608pv_g5
675
700
725
750
775
800
ptva082407nf_g4
825
29
33
37
41
45
49
53
57
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02.5, 2017-07-18
Efficiency (%)
Efficiency (%)
Gain (dB)
40
20
40
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