Silicon Carbide Power Schottky Diode
CDBJSC8650-G
Reverse Voltage: 650 V
Forward Current: 8 A
RoHS Device
Features
- Rated to 650V at 8 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
0.107(2.72)
0.094(2.40)
0.646(16.40)
Max.
0.620(15.75)
0.600(15.25)
0.409(10.40)
0.394(10.00)
0.116(2.95)
0.104(2.65)
0.311(7.90)
0.303(7.70)
0.152(3.85)
0.148(3.75)
TO-220-2
0.181(4.60)
0.173(4.40)
0.052(1.32)
0.048(1.23)
0.260(6.60)
0.244(6.20)
Circuit diagram
K(3)
0.067(1.70)
0.045(1.14)
0.155(3.93)
0.138(3.50)
0.551(14.00)
0.512(13.00)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.028(0.70)
0.019(0.49)
K(1)
A(2)
Dimensions in inches and (millimeter)
Maximum Rating
(at T =25°C unless otherwise noted)
A
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Conditions
Symbol
V
RRM
V
RSM
V
DC
Value
650
650
650
8
Unit
V
V
V
A
A
A
W
Tc = 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
T
C
= 25°C
I
F
I
FRM
I
FSM
P
TOT
40
80
102.4
45
T
C
= 110°C
Junction to case
R
θJC
T
J
T
STG
1.465
-55 ~ +175
-55 ~ +175
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Page 1
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Forward voltage
Conditions
I
F
= 8 A , T
J
= 25°C
Symbol
V
F
Typ
1.47
1.78
10
Max
1.7
Unit
V
I
F
= 8 A , T
J
= 175°C
V
R
= 650V , T
J
= 25°C
Reverse current
V
R
=
650V , T
J
= 175°C
V
R
= 400V , T
J
= 150°C
Total capacitive charge
Q
C
=
∫
VR
0
100
µA
I
R
15
C(V) dv
Q
C
30
nC
V
R
= 0V , T
J
= 25°C ,
f = 1 MH
Z
Total capacitance
V
R
= 200V , T
J
= 25°C ,
f = 1 MH
Z
V
R
= 400V , T
J
= 25°C ,
f = 1 MH
Z
C
560
56.5
54
pF
Typical Characteristics (
CDBJSC8650-G
)
Fig.1 - Forward Characteristics
8.0
7.0
T
J
=25°C
Fig.2 - Reverse Characteristics
0.09
0.08
Reverse
Current,
I
R
(mA)
Forward Current, I
F
(A)
6.0
T
J
=75°C
0.07
T
J
=175°C
5.0
4.0
3.0
2.0
1.0
0
0
0.4
0.8
1.2
1.6
2.0
2.4
T
J
=125°C
T
J
=175°C
0.06
0.05
0.04
0.03
T
J
=75°C
T
J
=125°C
0.02
0.01
0
0
100
200
300
400
500
600
700
T
J
=25°C
Forward Voltage, V
F
(V)
Reverse Voltage, V
R
(V)
Fig.3 - Current Derating
Capacitance Between Terminals, C
J
(pF)
90
80
600
550
500
450
400
350
300
250
200
150
100
50
Fig.4 - Capacitance vs. Reverse Voltage
Forward Current, I
F
(A)
70
60
50
10% Duty
30% Duty
40
30
20
50% Duty
70% Duty
10
0
25
50
75
D.C.
100
125
150
175
0
0.01
0.1
1
10
100
1000
Case Tempature, T
C
(°C)
Reverse Voltage, V
R
(V)
REV:A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC05
Page 2
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Marking Code
Part Number
CDBJSC8650-G
Marking Code
JSC8650
C
JSC8650
Standard Packaging
TUBE PACK
Case Type
TUBE
( pcs )
BOX
( pcs )
TO-220-2Pin
50
1,000
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC05
REV:A
Page 3
Comchip Technology CO., LTD.
嵌入式系统
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