• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
5
APPLICATIONS
• DC/DC converters
• DC/AC inverters
D
1
D
2
6.
15
m
m
1
Top View
5
5.1
mm
1
2
S
1
3
G
1
4
S
2
G
2
Bottom View
• Synchronous rectification
• Battery and load switch
G
1
G
2
Ordering Information:
SiRB40DP-T1-GE3 (lead (Pb)-free and halogen-free)
S
1
N-Channel
MOSFET
S
2
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
SYMBOL
V
DS
V
GS
LIMIT
40
+20, -16
40
g
40
g
24.4
b, c
19.8
b, c
100
30
g
3.1
b, c
25
31.25
46.2
29.6
3.5
b, c
2.3
b, c
-55 to +150
260
°C
W
mJ
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum
Junction-to-Ambient
b, f
t
10 s
Steady State
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYPICAL
25
2.2
MAXIMUM
35
2.7
UNIT
°C/W
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
g. Package limited.
S16-1324-Rev. A, 04-Jul-16
Document Number: 68578
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRB40DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
V
DD
= 20 V, R
L
= 2
,
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
,
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 10 V, I
D
= 10 A
MIN.
40
-
-
1.1
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
23
-5.1
-
-
-
-
-
MAX.
-
-
-
2.4
± 100
1
10
-
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
-
-
0.74
39
35
21
18
30
100
1.1
78
70
-
-
A
V
ns
nC
ns
4290
680
102
61.8
29.5
11.3
6.9
27.5
1.3
13
37
33
8
29
96
30
12
-
-
-
93
45
-
-
-
2.5
26
74
66
16
58
190
60
24
ns
nC
pF
0.00270 0.00325
0.00350 0.00420
76
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1324-Rev. A, 04-Jul-16
Document Number: 68578
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRB40DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
120
100
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
80
60
T
C
= 25 °C
10000
80
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
T
C
= -55 °C
60
V
GS
= 3 V
40
100
20
V
GS
= 2 V
40
20
T
C
= 125 °C
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.0040
10000
5000
C
iss
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.0036
V
GS
= 4.5 V
4000
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
C
oss
0.0032
3000
0.0028
100
V
GS
= 10 V
2000
100
0.0024
1000
C
rss
0.0020
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 10 A
V
GS
= 10 V
10000
8
V
DS
= 20 V
V
DS
= 30 V
1.7
1000
1st line
2nd line
1000
1st line
2nd line
100
10
6
V
DS
= 10 V
1.4
V
GS
= 4.5 V
4
100
2
1.1
0.8
0
0
13
26
39
52
65
Q
g
- Total Gate Charge (nC)
2nd line
10
0.5
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-1324-Rev. A, 04-Jul-16
Document Number: 68578
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRB40DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.010
I
D
= 10 A
Vishay Siliconix
Axis Title
10000
10
2nd line
I
S
- Source Current (A)
2nd line
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
0.008
1000
1st line
2nd line
100
0.002
T
J
= 25 °C
1000
1st line
2nd line
1
T
J
= 25 °C
0.006
T
J
= 125 °C
0.1
100
0.01
0.004
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
150
Axis Title
10000
0.2
2nd line
V
GS(th)
- Variance (V)
1000
1st line
2nd line
-0.1
I
D
= 5 mA
120
1000
2nd line
Power (W)
1st line
2nd line
100
30
10
0.01
0.1
Time (s)
2nd line
1
10
90
-0.4
I
D
= 250 μA
60
100
-0.7
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1000
10 ms
100 ms
1s
Limited by R
DS(on) (1)
1
100
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
10 s
DC
0.01
0.01
(1)
10
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S16-1324-Rev. A, 04-Jul-16
Document Number: 68578
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
10
1 ms
SiRB40DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
Vishay Siliconix
80
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
20
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
Axis Title
10000
2.0
10000
1.6
1000
2nd line
Power (W)
1st line
2nd line
36
2nd line
Power (W)
1.2
1000
1st line
2nd line
100
0.4
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
0.8
0
60
Package Limited
40
0
Current Derating
a
Axis Title
60
48
24
100
12
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1324-Rev. A, 04-Jul-16
Document Number: 68578
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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