NXP Semiconductors
Technical Data
Document Number: MRF13750H
Rev. 1, 01/2018
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and
medical (ISM) applications in the 700 to 1300 MHz frequency range. The
transistors are capable of CW or pulse power in narrowband operation.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
915
(1)
915
(2)
1300
(3)
Signal Type
CW
Pulse
(100
sec,
10% Duty Cycle)
CW
P
out
(W)
750
850
700
G
ps
(dB)
19.3
20.5
17.2
D
(%)
67.1
69.2
56.0
MRF13750H
MRF13750HS
700–1300 MHz, 750 W CW, 50 V
RF POWER LDMOS TRANSISTORS
Load Mismatch/Ruggedness
Frequency
(MHz)
915
(2)
Signal Type
Pulse
(100
sec,
10%
Duty Cycle)
VSWR
> 10:1 at all
Phase
Angles
P
in
(W)
15.9 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
NI-
-1230H-
-4S
MRF13750H
1. Measured in 915 MHz narrowband reference circuit (page 5).
2. Measured in 915 MHz narrowband production test fixture (page 11).
3. Measured in 1300 MHz narrowband reference circuit (page 8).
Features
Internally input pre--matched for ease of use
Device can be used single--ended or in a push--pull configuration
Characterized for 30 to 50 V
Suitable for linear applications with appropriate biasing
Integrated ESD protection
Recommended driver: MRFE6VS25GN (25 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
NI-
-1230S-
-4S
MRF13750HS
Gate A 3
1 Drain A
Typical Applications
915 MHz industrial heating/welding systems
1300 MHz particle accelerators
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2018 NXP B.V.
MRF13750H MRF13750HS
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
–0.5, +105
–6.0, +10
55, +0
–65 to +150
–40 to +150
–40 to +225
1333
6.67
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 82C, 700 W CW, 50 Vdc, I
DQ(A+B)
= 150 mA, 915 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 76C, 850 W Peak, 100
sec
Pulse Width,
10% Duty Cycle, 50 Vdc, I
DQ(A+B)
= 200 mA, 915 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.15
0.014
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
C3, passes 1200 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
A)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 55 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 105 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 275
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
DQ(A+B)
= 200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 2.8 Adc)
Dynamic Characteristics
(4,5)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
1.
2.
3.
4.
5.
C
rss
C
oss
—
—
1.94
63.8
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.3
1.7
0.1
1.72
2.2
0.23
2.3
2.7
0.6
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
105
—
—
—
—
—
—
1
—
1
10
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Each side of device measured separately.
Part internally input pre--matched.
(continued)
MRF13750H MRF13750HS
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In NXP Narrowband Production Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ(A+B)
= 200 mA, P
out
= 850 W Peak
(85 W Avg.), f = 915 MHz, 100
sec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
G
ps
D
19.5
66.0
20.5
69.2
21.5
—
dB
%
Table 5. Load Mismatch/Ruggedness
(In NXP Narrowband Production Test Fixture, 50 ohm system) I
DQ(A+B)
= 200 mA
Frequency
(MHz)
915
Signal Type
Pulse
(100
sec,
10% Duty Cycle)
VSWR
> 10:1 at all
Phase Angles
P
in
(W)
15.9 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
Table 6. Ordering Information
Device
MRF13750HR5
MRF13750HSR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230H--4S
NI--1230S--4S
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
10000
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
NORMALIZED V
GS(Q)
1.08
1.06
1.04
1.02
1
0.98
0.96
C
rss
1
0
10
20
30
40
50
0.94
0.92
–50
–25
0
25
50
75
100
750 mA
1000 mA
I
DQ(A+B)
= 200 mA
500 mA
V
DD
= 50 Vdc
C, CAPACITANCE (pF)
1000
100
C
oss
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (C)
I
DQ
(mA)
200
500
750
1000
Slope (mV/C)
–2.168
–1.992
–1.903
–1.854
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
10
8
I
D
= 17.3 Amps
10
7
MTTF (HOURS)
V
DD
= 50 Vdc
10
6
22.3 Amps
10
5
26.2 Amps
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http:/www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – CW
MRF13750H MRF13750HS
4
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND REFERENCE CIRCUIT – 3.0
3.8 (7.6 cm
9.7 cm)
Table 7. 915 MHz Narrowband Performance
(In NXP Reference Circuit, 50 ohm system)
V
DD
= 50 Vdc, I
DQ(A+B)
= 150 mA, P
in
= 8.8 W
Frequency
(MHz)
915
Signal
Type
CW
P
out
(W)
750
G
ps
(dB)
19.3
D
(%)
67.1
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
