IRF100P219
IR MOSFET - StrongIRFET™
D
V
DSS
R
DS(on) typ.
max
100V
1.4m
1.7m
304A
195A
Applications
G
S
UPS and Inverter applications
Half-bridge and full-bridge topologies
Resonant mode power supplies
DC/DC and AC/DC converters
OR-ing and redundant power switches
Brushed and BLDC Motor drive applications
Battery powered circuits
I
D (Silicon Limited)
I
D (Package Limited)
D
S
G D
TO-247AC
IRF100P219
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free ; RoHS Compliant ; Halogen-Free
Package Type
TO-247AC
Standard Pack
Form
Tube
G
Gate
D
Drain
S
Source
Base part number
IRF100P219
Quantity
25
Orderable Part Number
IRF100P219
RDS(on), Drain-to -Source On Resistance (m
)
6
I D = 100A
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
TJ = 25°C
315
280
245
I D, Drain Current (A)
Limited By Package
210
175
140
105
70
35
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
TJ = 125°C
Figure 1
Typical On-Resistance vs. Gate Voltage
Figure 2
Maximum Drain Current vs. Case Temperature
V2.0
2017-12-18
Final Datasheet
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Please read the important Notice and Warnings at the end of this document
IR MOSFET-StrongIRFET™
IRF100P219
Table of Contents
Table of Contents
Applications
Benefits
…..………………………………………………………………………...……………..……………1
…..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1
2
3
4
Parameters ………………………………………………………………………………………………3
Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
Electrical characteristics ………………………………………………………………………………5
Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………14
Qualification Information ……………………………………………………………………………………………15
Revision History …………………………………………………………………………………………..…………16
Final Datasheet
2
V2.0
2017-12-18
IR MOSFET-StrongIRFET™
IRF100P219
Parameters
1
Table1
Parameter
V
DS
R
DS(on) max
I
D (Silicon Limited)
Parameters
Key performance parameters
Values
100
1.7
304
195
Units
V
m
A
A
I
D (Package Limited)
Final Datasheet
3
V2.0
2017-12-18
IR MOSFET-StrongIRFET™
IRF100P219
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at T
J
=25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Table 3
Thermal characteristics
Parameter
Symbol
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface
R
CS
Junction-to-Ambient
R
JA
I
D
I
D
I
D
I
DM
P
D
V
GS
T
J
T
STG
-
-
T
C
= 25°C, V
GS
@ 10V
T
C
= 100°C, V
GS
@ 10V
T
C
= 25°C, V
GS
@ 10V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
-
-
-
-
Values
304
215
195
780
341
2.3
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Unit
A
W
W/°C
V
°C
-
Conditions
T
J
approximately 90°C
-
-
Min.
-
-
-
Typ.
-
0.24
-
Max.
0.44
-
40
Unit
°C/W
Table 4
Parameter
Avalanche characteristics
Symbol
E
AS (Thermally limited)
I
AR
E
AR
Values
464
See Fig 16, 17, 23a, 23b
Unit
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that Current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.093mH, R
G
= 50
, I
AS
= 100A, V
GS
=10V.
SD
100A, di/dt
1950A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
I
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Pulse drain current is limited to 780A by source bonding technology.
Final Datasheet
4
V2.0
2017-12-18
IR MOSFET-StrongIRFET™
IRF100P219
Electrical characteristics
3
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
Conditions
Values
Unit
Min. Typ. Max.
100
-
-
V
-
0.04
-
V/°C
-
1.4
1.7
m
-
1.7
2.1
2.2
-
-
-
-
-
-
-
-
1.2
3.8
5.0
100
100
-
V
µA
nA
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1.0mA
Breakdown Voltage Temp. Coefficient
V
(BR)DSS
/T
J
Reference to 25°C, I
D
= 2.0mA
V
GS
= 10V, I
D
= 100A
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS
= 6V, I
D
= 50A
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate Resistance
Table 6
Parameter
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Table 7
Parameter
V
GS(th)
I
DSS
I
GSS
R
G
V
DS
= V
GS
, I
D
= 278µA
V
DS
= 100V, V
GS
=0V
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
Dynamic characteristics
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Conditions
V
DS
= 25V, I
D
= 100A
I
D
= 100A
V
DS
= 50V
V
GS
= 10V
V
DD
= 50V
I
D
= 100A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
Values
Min. Typ. Max.
224
-
-
-
180
270
-
50
-
-
40
-
-
140
-
-
30
-
-
90
-
-
100
-
-
80
-
-
12020
-
-
1950
-
-
50
-
-
-
2380
2760
-
-
Unit
S
nC
ns
pF
Reverse Diode
Symbol
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Final Datasheet
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Values
Min. Typ. Max.
D
Unit
-
-
-
-
-
-
-
-
-
-
-
-
2.5
90
100
224
280
4.3
304
780
1.2
-
-
-
-
-
-
G
S
A
V
V/ns
ns
nC
A
V2.0
2017-12-18
T
J
= 25°C, I
S
= 100A,V
GS
= 0V
T
J
= 175°C, I
S
= 100A,V
DS
= 100V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
5
V
DD
= 85V
I
F
= 100A,
di/dt = 100A/µs
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