Bulletin PD-20999 rev. B 12/02
100BGQ100
100BGQ100J
SCHOTTKY RECTIFIER
100 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular waveform
@ T
C
I
DC
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
@100 Apk typical
@T
J
T
J
range
Maximum
Description/ Features
Units
A
°C
A
V
A
V
°C
°C
This Schottky rectifier has been optimized for low reverse leakage
at high temperature
The proprietary barrier technology allows for reliable operation up
to 175°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
175°C T
J
operation
High Frequency Operation
Low forward voltage drop
Continuous High Current operation
Guard ring for enhanced ruggedness and long term
reliability
Values
100
129
141
100
6300
0.74
125
- 55 to 175
PowIRtab
TM
package
Case Styles
100BGQ100
100BGQ100J
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1
100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
100
V
RWM
Max. Working Peak Reverse Voltage (V)
100BGQ100, 100BGQ100J
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
F(RMS)
RMS Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non-RepetitiveAvalancheEnergy
Repetitive Avalanche Current
Values
100
141
6300
800
9
2
Units
A
A
A
mJ
A
T
C
= 120°C
Conditions
50% duty cycle @ T
C
= 129°C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
T
J
= 25 °C, I
AS
= 2 Amps, L = 4.5 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Forward Voltage Drop
(1) (2)
Values
Typ. Max.
Units
V
V
V
V
µA
mA
V
mΩ
pF
nH
V/ µs
@
@
50A
50A
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
0.80 0.84
0.96 1.04
0.64 0.66
0.74 0.77
@ 100A
@ 100A
T
J
= 25 °C
T
J
= 125°C
T
J
=
T
J
max.
I
RM
Reverse Leakage Current (1)
22
14
300
18
2.0
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Max. Junction Capacitance
Typical Series Inductance
0.484
1320
3.5
10000
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
Measured from tab to mounting plane
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) V
FM
= V
F(TO)
+ r
t
x I
F
Values
-55 to 175
-55 to 175
0.50
0.20
5 (0.18)
Min.
Max.
1.2 (10)
2.4 (20)
Units
°C
°C
°C/W
°C/W
g (oz.)
N*m
(Ibf-in)
DCoperation
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Mounting surface , smooth and greased
PowIRtab
TM
2
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100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
1000
1000
100
Reverse Current - I
R
(mA)
10
1
0.1
0.01
0.001
0.0001
T
J
= 175°C
150°C
125°C
100°C
75°C
50°C
25°C
Instantaneous Forward Current - I
F
(A)
100
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
T
J
= 175°C
T
J
= 125°C
Junction Capacitance - C
T
(pF)
T
J
= 25°C
10
10000
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
T = 25°C
J
1000
1
0
0.5
1
1.5
2
2.5
100
0
20
40
60
80
100
Forward Voltage Drop - V
FM
(V)
Reverse Voltage - V (V)
R
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
Thermal Impedance Z
thJC
(°C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
0.1
D=
D=
D=
D=
D=
0.75
0.50
0.33
0.25
0.20
P
DM
Single Pulse
(Thermal Resistance)
Notes:
t1
t2
1. Duty factor D = t 1/ t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
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100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
180
Allowable Case Temperature - (°C)
Average Power Loss - (Watts)
120
100
80
60
40
20
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
170
160
150
140
130
120
110
100
0
Square wave (D = 0.50)
80% Rated V
R
applied
see note (3)
DC
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
10000
Fig. 6 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
40HFL40S02
+
DUT
IRFP460
Rg = 25 ohm
Vd = 25 Volt
CURRENT
MONITOR
Fig. 8 - Unclamped Inductive Test Circuit
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
Outline Table
Case Style
PowIRtab
TM
Dimensions in millimeters and (inches)
Case Style
PowIRtab
TM
"J" version
Dimensions in millimeters and (inches)
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5
Microchip MCU
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