电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N4006 R0

产品描述Rectifiers 1A,800V,STD.SILASTIC RECTIFIER
产品类别半导体    分立半导体   
文件大小309KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 全文预览

1N4006 R0概述

Rectifiers 1A,800V,STD.SILASTIC RECTIFIER

1N4006 R0规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
DO-41-2
Vr - Reverse Voltage800 V
If - Forward Current1 A
类型
Type
Standard Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1 V
Max Surge Current30 A
Ir - Reverse Current5 uA
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
高度
Height
2.7 mm
长度
Length
5.2 mm
产品
Product
Rectifiers
宽度
Width
2.7 mm
单位重量
Unit Weight
0.010935 oz

文档预览

下载PDF文档
1N4001 thru 1N4007
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Silicon Rectifiers
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.33g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
ed
1N
1N
1N
100
70
100
200
200
400
280
400
1
30
3.7
1.0
5
50
10
6
15
65
- 55 to +150
- 55 to +150
140
nd
50
35
50
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
1N
1N
1N
800
560
800
1N
1000
700
1000
4001 4002 4003 4004 4005 4006 4007
600
420
600
UNIT
V
V
V
A
A
A
2
s
V
μA
pF
O
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@1A
tR
Maximum reverse current @ Rated VR T
J
=25
T
J
=125℃
Typical junction capacitance (Note 2)
Typical Thermal Resistance
No
eco
V
F
I
R
Cj
R
θjC
R
θjL
R
θjA
T
J
T
STG
mm
e
C/W
O
O
Operating junction temperature range
Storage temperature range
C
C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405004
Version: H14

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 895  833  1308  524  2901  30  57  12  6  28 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved